Part: PEF82912H

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Previous Parts:PDTA124XE,PDZ11B,PDZ5.1B,PE29F040,PE53911T,PEB2046N,PEB2050N V2.2,PEB20591HV2.1,PEB20901PV4.1,PEB2095N,PEB2186H,PEB2196N,PEB2466H V1.2,PEB3263FV1.4,PEEL153P-30,PEEL18CV8P-25

The followings are offers provided by our member in Electronic Components Offer site about the following parts: PEF82912H":

Post DatePart NumberBrandD/CDescQtyCompany
Tue Sep 26 02:22:00 UTC 2006PEF82912H (from hkin.com)infineon03+/04+300AOHUADA TECHNOLOGICAL (HONGKONG) LIMITED
Tue Sep 26 02:22:00 UTC 2006PEF82912H (from standard server 2)infineon03+/04+300AOHUADA TECHNOLOGICAL (HONGKONG) LIMITED
Tue Sep 26 02:22:00 UTC 2006PEF82912H (from parts server 2)infineon03+/04+300AOHUADA TECHNOLOGICAL (HONGKONG) LIMITED
Tue Sep 26 02:22:00 UTC 2006PEF82912H (from hkin.com 2)infineon03+/04+300AOHUADA TECHNOLOGICAL (HONGKONG) LIMITED
Tue Sep 26 02:22:00 UTC 2006PEF82912H (from hkin.com 2)infineon03+/04+300AOHUADA TECHNOLOGICAL (HONGKONG) LIMITED
Fri Sep 22 08:01:00 UTC 2006PEF82912H (from hkin.com)N/A2004+QFP302Songlin Electronics (HK) Co., Ltd.
Fri Sep 22 08:01:00 UTC 2006PEF82912H (from standard server 2)N/A2004+QFP302Songlin Electronics (HK) Co., Ltd.
Fri Sep 22 08:01:00 UTC 2006PEF82912H (from parts server 2)N/A2004+QFP302Songlin Electronics (HK) Co., Ltd.
Fri Sep 22 08:01:00 UTC 2006PEF82912H (from hkin.com 2)N/A2004+QFP302Songlin Electronics (HK) Co., Ltd.
Fri Sep 22 08:01:00 UTC 2006PEF82912H (from hkin.com 2)N/A2004+QFP302Songlin Electronics (HK) Co., Ltd.
Wed Sep 27 12:51:00 UTC 2006PEF82912HV1.4 (from hkin.com)INFINEON03+QFP-64133ANWELL COMPONENTS CO.
Wed Sep 27 12:51:00 UTC 2006PEF82912HV1.4 (from standard server 2)INFINEON03+QFP-64133ANWELL COMPONENTS CO.
Wed Sep 27 12:51:00 UTC 2006PEF82912HV1.4 (from parts server 2)INFINEON03+QFP-64133ANWELL COMPONENTS CO.
Wed Sep 27 12:51:00 UTC 2006PEF82912HV1.4 (from hkin.com 2)INFINEON03+QFP-64133ANWELL COMPONENTS CO.
Wed Sep 27 12:51:00 UTC 2006PEF82912HV1.4 (from hkin.com 2)INFINEON03+QFP-64133ANWELL COMPONENTS CO.
Sat Sep 2 01:48:00 UTC 2006PEF82912HV1.4 (from hkin.com)Infineon03+MQFP6460HongKong MingXing Electronics Company
Sat Sep 2 01:48:00 UTC 2006PEF82912HV1.4 (from standard server 2)Infineon03+MQFP6460HongKong MingXing Electronics Company
Sat Sep 2 01:48:00 UTC 2006PEF82912HV1.4 (from parts server 2)Infineon03+MQFP6460HongKong MingXing Electronics Company
Sat Sep 2 01:48:00 UTC 2006PEF82912HV1.4 (from hkin.com 2)Infineon03+MQFP6460HongKong MingXing Electronics Company
Sat Sep 2 01:48:00 UTC 2006PEF82912HV1.4 (from hkin.com 2)Infineon03+MQFP6460HongKong MingXing Electronics Company
Fri Sep 15 05:46:00 UTC 2006PEF82912HV1.4 (from hkin.com)INFINEON03+133ANCHI (HONG KONG) ELECTRONICS CO
Fri Sep 15 05:46:00 UTC 2006PEF82912HV1.4 (from standard server 2)INFINEON03+133ANCHI (HONG KONG) ELECTRONICS CO
Fri Sep 15 05:46:00 UTC 2006PEF82912HV1.4 (from parts server 2)INFINEON03+133ANCHI (HONG KONG) ELECTRONICS CO
Fri Sep 15 05:46:00 UTC 2006PEF82912HV1.4 (from hkin.com 2)INFINEON03+133ANCHI (HONG KONG) ELECTRONICS CO
Fri Sep 15 05:46:00 UTC 2006PEF82912HV1.4 (from hkin.com 2)INFINEON03+133ANCHI (HONG KONG) ELECTRONICS CO

Last record PEEL18CV8P-25:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Sep 25 16:17:00 UTC 2006PEEL18CV8P-25 (from hkin.com)ICT8950DIP/20100HUESPORT ELECTRONICS (H.K.) CO.,LIMITED
Mon Oct 2 13:47:00 UTC 2006PEEL18CV8P-25L (from hkin.com)ICT06年DIP8000Shenzhen KELONGCHUANG Electronics Co.,Ltd

Last record PEEL153P-30:

Post DatePart NumberBrandD/CDescQtyCompany
Thu Sep 7 03:26:00 UTC 2006PEEL153P-30 (from hkin.com)2ForLida International Limited

Last record PEB3263FV1.4:

Post DatePart NumberBrandD/CDescQtyCompany
Sat Sep 2 01:44:00 UTC 2006PEB3263FV1.4 (from hkin.com)Infineon03+TQFP641020HongKong MingXing Electronics Company
Thu Sep 21 08:22:00 UTC 2006PEB3263FV1.4 (from hkin.com)438Great Golden Int'l(HK) Electronics Co.
Tue Sep 19 14:40:00 UTC 2006PEB3263FV1.4 (from hkin.com)infineon04+TQFP6460SOUROE (HK)ELECTRONICS LIMITED

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PEF82912H,PEF82912H,Comments from user about PEF82912H: However, many formational and functional block parameters can be tuned (capacity parameters, memory size, element base, block composition and interconnection structure). When a doped semiconductor contains excess holes it is called "p-type", and when it contains excess free electrons it is known as "n-type", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. Thyristors are able to withstand very high reverse breakdown voltage and are also capable of carrying high current. In addition to IEEE standard 1164, several child standards were introduced to extend functionality of the language. The thyristor appeared in 1957. The large number of discrete logic gates used more electrical powerXand therefore, produced more heatXthan a more integrated design with fewer ICs. Heat generated by electronic circuitry must be dissipated to prevent immediate failure and improve long term reliability. Semiconductor components benefit from Moore's Law, an observed principle which states that, for a given price, semiconductor functionality doubles every two years. Anything related to :PEF82912H, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: PEF82912H, search hkinventory: PEF82912H, Depending on the type of carrier in the channel, the device may be an n-channel (for electrons) or a p-channel (for holes) MOSFET.6 defines a subset of the language that is considered the official synthesis subset. The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. Digital circuits are electric circuits based on a number of discrete voltage levels. Datasheet Dir, DataSheet Archive
A passive component, depending on field, may be either a component that consumes (but does not produce) energy (thermodynamic passivity), or a component that is incapable of power gain (incremental passivity).[specify] Minor changes in the standard (2000 and 2002) added the idea of protected types (similar to the concept of class in C++) and removed some restrictions from port mapping rules. The gate electrode is charged to produce an electric field that controls the conductivity of a "channel" between two terminals, called the source and drain.Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. Desirable properties of MOSFETs, such as their utility in low-power devices, usually in the CMOS configuration, allowed them to capture nearly all market share for digital circuits; more recently MOSFETs have captured most analog and power applications as well, including modern clocked analog circuits, voltage regulators, amplifiers, power transmitters, motor drivers, etc.Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. Bipolar junction transistors are formed from two p-n junctions, in either n-p-n or p-n-p configuration.
any passive component and active component such as:Diode, The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. General-purpose microprocessors in personal computers are used for computation, text editing, multimedia display, and communication over the Internet. Microprocessors operate on numbers and symbols represented in the binary numeral system. The transistor's low cost, flexibility, and reliability have made it a ubiquitous device. For example driver circuit
PEF82912H,PEF82912H,Comments from user about PEF82912H: More importantly it also allows the circuit to operate at higher frequencies as the tuned circuit can be used to resonate any inter-electrode and stray capacitances, which normally limit the frequency response. As microprocessor designs get faster, the cost of manufacturing a chip (with smaller components built on a semiconductor chip the same size) generally stays the same. Several specialized processing devices have followed from the technology. The integrated circuit's mass production capability, reliability, and building-block approach to circuit design ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. VHDL project is portable. It was made of Germanium and had a voltage capability of 200 volts and a current rating of 35 amperes. There are some VHDL compilers which build executable binaries. The distance that signals had to travel between ICs on the boards limited the speed at which a computer could operate. Anything related to :PEF82912H, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: PEF82912HSee also: