Part: 1N6012B

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Offer Index 59

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Previous Parts:1761ACA2,1812 X7R 25V 226K,1DI150F-055,1DI75F-100,2N3242A,1FI250B-060,2N3123,1N4742,1N4742C,1N4749,1N4749C,26LS31,1N5257,1N5333B,1N5351A,1N5358A

The followings are offers provided by our member in Electronic Components Offer site about the following parts: 1N6012B":

Post DatePart NumberBrandD/CDescQtyCompany
Wed Sep 27 03:15:00 UTC 20061N6012B (from hkin.com)EX量大价优75000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:15:00 UTC 20061N6012B (from standard server 2)EX量大价优75000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:15:00 UTC 20061N6012B (from parts server 2)EX量大价优75000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:15:00 UTC 20061N6012B (from hkin.com 2)EX量大价优75000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:15:00 UTC 20061N6012B (from hkin.com 2)EX量大价优75000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:16:00 UTC 20061N6012B (from hkin.com)EX量大价优70000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:16:00 UTC 20061N6012B (from standard server 2)EX量大价优70000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:16:00 UTC 20061N6012B (from parts server 2)EX量大价优70000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:16:00 UTC 20061N6012B (from hkin.com 2)EX量大价优70000A-SI-KA Elec. Co., Ltd.
Wed Sep 27 03:16:00 UTC 20061N6012B (from hkin.com 2)EX量大价优70000A-SI-KA Elec. Co., Ltd.

Last record 1N5358A:

Post DatePart NumberBrandD/CDescQtyCompany
Sat Sep 9 04:29:00 UTC 20061N5358A (from hkin.com)EIC98+10000ShenZhen Linkrich Technology Co., Ltd.
Sat Sep 9 04:29:00 UTC 20061N5358A (from hkin.com)EIC04+100000ShenZhen Linkrich Technology Co., Ltd.

Last record 1N5351A:

Post DatePart NumberBrandD/CDescQtyCompany
Sat Sep 9 04:29:00 UTC 20061N5351A (from hkin.com)EIC200210000ShenZhen Linkrich Technology Co., Ltd.
Sat Sep 9 04:29:00 UTC 20061N5351A (from hkin.com)EIC04+100000ShenZhen Linkrich Technology Co., Ltd.

Last record 1N5333B:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Sep 11 09:46:00 UTC 20061N5333B (from hkin.com)PHILIPSDIP150000SAI KE ELECTRONICS INTERNATIONAL DEVELOPMENT CO., LIMITED
Mon Sep 11 09:46:00 UTC 20061N5333B (from hkin.com)ONDIP150000SAI KE ELECTRONICS INTERNATIONAL DEVELOPMENT CO., LIMITED
Fri Sep 29 06:15:00 UTC 20061N5333B3.3 (from hkin.com)ON/MOT10000DINGFUNG INTL ELECTRONICS LIMITED
Sat Sep 23 05:24:00 UTC 20061N5333BRL (from hkin.com)ON2004+DO-27100000HENGGUANG (HK) ELECTRONICS TRADING LIMITED
Mon Sep 25 05:24:00 UTC 20061N5333BRL (from hkin.com)ON05+DIP3000Chip E-Go Trading Ltd.

If you want to find more about 1N6012B, please visit us on HKin


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1N6012B,1N6012B,Comments from user about 1N6012B: The size, latency, throughput and connectivity of memories within the system are also microarchitectural decisions. Most power semiconductor devices are only used in commutation mode (i.e they are either on or off), and are therefore optimized for this. This problem is caused by the slow decay of the conduction current during turn-off resulting from slow recombination of large number of carriers, which flood the thick 'drift' region of the IGBT during conduction. Desirable properties of MOSFETs, such as their utility in low-power devices, usually in the CMOS configuration, allowed them to capture nearly all market share for digital circuits; more recently MOSFETs have captured most analog and power applications as well, including modern clocked analog circuits, voltage regulators, amplifiers, power transmitters, motor drivers, etc. The MOSFET is the most used semiconductor device today. The analogous field-effect transistor circuit is the common-source amplifier. Bipolar junction transistors are formed from two p-n junctions, in either n-p-n or p-n-p configuration. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum. Anything related to :1N6012B, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: 1N6012B, search hkinventory: 1N6012B, Computers, cellular phones, and other digital appliances are now inextricable parts of the structure of modern societies, made possible by the low cost of production of integrated circuits. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. Actually, all power semiconductors rely on a PIN diode structure to sustain voltage. With the ability to put large numbers of transistors on one chip, it becomes feaible to integrate memory on the same die as the processor. Datasheet Dir, DataSheet Archive
There is an ever increasing need to keep product information updated and comparable, for the consumer to make an informed choice. Small circuit breakers may be manually operated; larger units have solenoids to trip the mechanism, and electric motors to restore energy to the springs. It is generally considered a "best practice" to write very idiomatic code for synthesis as results can be incorrect or suboptimal for non-standard constructs. Its major limitation for low voltage applications is the high voltage drop it exhibits in on-state (2 to 4 V). In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information. LEDs present many advantages over incandescent light sources including lower energy consumption, longer lifetime, improved robustness, smaller size, faster switching, and greater durability and reliability. The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. One overriding characteristic of consumer electronic products is the trend of ever-falling prices.
any passive component and active component such as:Diode, voltage amplifiers or buffer amplifiers. Used without qualifier, the term passive is ambiguous. These units perform the operations or calculations of the processor. The pipelined datapath is the most commonly used datapath design in microarchitecture today. For example driver circuit
1N6012B,1N6012B,Comments from user about 1N6012B: The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. Microprocessor control of a system can provide control strategies that would be impractical to implement using electromechanical controls or purpose-built electronic controls. An ideal capacitor is characterized by a single constant value, capacitance, measured in farads. This indicates the variety of filter (see above) and the center or corner frequencies. Several specialized processing devices have followed from the technology. MOSFET is an IC which is semiconductor device. The first bipolar transistors devices with substantial power handling capabilities were introduced in the 1960s. These include large and small household appliances, cars (and their accessory equipment units), car keys, tools and test instruments, toys, light switches/dimmers and electrical circuit breakers, smoke alarms, battery packs, and hi-fi audio/visual components (from DVD players to phonograph turntables.) Such products as cellular telephones, DVD video system and ATSC HDTV broadcast system fundamentally require consumer devices with powerful, low-cost, microprocessors. Anything related to :1N6012B, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: 1N6012BSee also: