Part: W78LE365F-24

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Previous Parts:VSC8132QR,VT5F9MN0006,VT6103L,VUO105-16N07,VUO110-12N07,VUO36-12N08,W25P243AF4A,W29C020CP90B,W29EE512P-90,W40S11-02HTR,W78C31B-24,W78C32BP-16,W78E51BP-24,W78E58BP,W78ERD2A40DL,W78IE52

The followings are offers provided by our member in Electronic Components Offer site about the following parts: W78LE365F-24":

Post DatePart NumberBrandD/CDescQtyCompany
Thu Sep 28 01:29:00 UTC 2006W78LE365F-24 (from hkin.com)WINBOND2004QFP50ShenZhen Hengsen Elcetroincs Co., Ltd.
Thu Sep 28 01:29:00 UTC 2006W78LE365F-24 (from standard server 2)WINBOND2004QFP50ShenZhen Hengsen Elcetroincs Co., Ltd.
Thu Sep 28 01:29:00 UTC 2006W78LE365F-24 (from parts server 2)WINBOND2004QFP50ShenZhen Hengsen Elcetroincs Co., Ltd.
Thu Sep 28 01:29:00 UTC 2006W78LE365F-24 (from hkin.com 2)WINBOND2004QFP50ShenZhen Hengsen Elcetroincs Co., Ltd.
Thu Sep 28 01:29:00 UTC 2006W78LE365F-24 (from hkin.com 2)WINBOND2004QFP50ShenZhen Hengsen Elcetroincs Co., Ltd.

Last record W78IE52:

Post DatePart NumberBrandD/CDescQtyCompany
Thu Sep 28 01:29:00 UTC 2006W78IE52 (from hkin.com)WINBOND2005DIP198ShenZhen Hengsen Elcetroincs Co., Ltd.
Sat Sep 16 06:04:00 UTC 2006W78IE52/P (from hkin.com)Winbond05+5000ShenZhen Wonderful Electronics Co., Ltd.

Last record W78ERD2A40DL:

Post DatePart NumberBrandD/CDescQtyCompany
Thu Sep 28 01:29:00 UTC 2006W78ERD2A40DL (from hkin.com)WINBOND2006DIP786ShenZhen Hengsen Elcetroincs Co., Ltd.

Last record W78E58BP:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Sep 29 07:28:00 UTC 2006W78E58BP (from hkin.com)sop5000HONG TU TRADING LIMITED
Thu Sep 28 02:03:00 UTC 2006W78E58BP-24 (from hkin.com)WINBOND02+PLCC102930FIGOER INT'L LIMITED
Fri Sep 8 08:42:00 UTC 2006W78E58BP-40 (from hkin.com)Winbond05+5000CHIPSLAND INTERNATIONAL LIMITED.
Wed Sep 13 05:05:00 UTC 2006W78E58BP-40 (from hkin.com)winbond2005PLCC740HAOLIDA (HK) ELECTRONICS TECH. CO., LIMITED
Tue Sep 19 09:30:00 UTC 2006W78E58BP-40 (from hkin.com)2000HK FEIYU ELECTRONICS CO., LIMITED
Fri Sep 22 07:27:00 UTC 2006W78E58BP-40 (from hkin.com)2000QINYUAN ELECTRONICS (HK) LIMITED
Mon Sep 25 06:15:00 UTC 2006W78E58BP-40 (from hkin.com)WINBOND06+2000Oways Electronics Co.,Ltd.

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W78LE365F-24,W78LE365F-24,Comments from user about W78LE365F-24: Produced at Fairchild Semiconductor, it was made of silicon, whereas Kilby's chip was made of germanium. Computers, cellular phones, and other digital appliances are now inextricable parts of the structure of modern societies, made possible by the low cost of production of integrated circuits. The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. The junctions which form where n-type and p-type semiconductors join together are called p-n junctions. The VHDL standard IEEE 1076-2008 was published in January 2009. In addition to IEEE standard 1164, several child standards were introduced to extend functionality of the language. These diagrams generally separate the datapath (where data is placed) and the control path (which can be said to steer the data). Often logic "0" will be a lower voltage and referred to as "Low" while logic "1" is referred to as "High". Anything related to :W78LE365F-24, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: W78LE365F-24, search hkinventory: W78LE365F-24, The large contact area and short distance reduces both the inductance and resistance of the connection. The junctions which form where n-type and p-type semiconductors join together are called p-n junctions. The junctions which form where n-type and p-type semiconductors join together are called p-n junctions. Later products include personal computers, telephones, MP3 players, audio equipment, televisions, calculators, GPS automotive electronics, digital cameras and players and recorders using video media such as DVDs, VCRs or camcorders. Datasheet Dir, DataSheet Archive
In February 2008, Accellera approved VHDL 4. Another type of transistor, the field effect transistor operates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field. An integrated circuit or monolithic integrated circuit (also referred to as IC, chip, and microchip) is an electronic circuit manufactured by the patterned diffusion of trace elements into the surface of a thin substrate of semiconductor material. Being created once, a calculation block can be used in many other projects. Increasingly these products have become based on digital technologies, and have largely merged with the computer industry in what is increasingly referred to as the consumerization of information technology. Thyristors are able to withstand very high reverse breakdown voltage and are also capable of carrying high current. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor.The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current.
any passive component and active component such as:Diode, Current conduction in a semiconductor occurs via mobile or "free" electrons and holes, collectively known as charge carriers. Unlike what happened when IA-32 was extended to x86-64, no new general purpose registers were added in 64-bit PowerPC, so any performance gained when using the 64-bit mode for applications making no use of the larger address space is minimal. A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. However, its excellent performance in low voltage make it the device of choice (actually the only choice) for applications below 200 V. For example driver circuit
W78LE365F-24,W78LE365F-24,Comments from user about W78LE365F-24: Many FPGA vendors have free (or inexpensive) tools to synthesize VHDL for use with their chips, where ASIC tools are often very expensive. Machines with different microarchitectures may have the same instruction set architecture, and thus be capable of executing the same programs. Note that this only works if only one of the above definitions of passivity is used ?if components from the two are mixed, the systems may be unstable under any criteria. Common-emitter amplifiers are also used in radio frequency circuits, for example to amplify faint signals received by an antenna. Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronic circuits (switch mode power supplies for example). One disadvantage of the thyristor for switching circuits is that once it is 'latched-on' in the conducting state it cannot be turned off by external control. Radio broadcasting in the early 20th century brought the first major consumer product, the broadcast receiver., followed soon after. Anything related to :W78LE365F-24, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: W78LE365F-24See also: