Part: K557C3016-50

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The followings are offers provided by our member in Electronic Components Offer site about the following parts: K557C3016-50":

Post DatePart NumberBrandD/CDescQtyCompany
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com)SAMSUNGSMD1107Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from standard server 2)SAMSUNGSMD1107Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from parts server 2)SAMSUNGSMD1107Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com 2)SAMSUNGSMD1107Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com 2)SAMSUNGSMD1107Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com)SAMSUNGSMD396Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from standard server 2)SAMSUNGSMD396Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from parts server 2)SAMSUNGSMD396Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com 2)SAMSUNGSMD396Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com 2)SAMSUNGSMD396Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com)SAMSUNGSMD256Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from standard server 2)SAMSUNGSMD256Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from parts server 2)SAMSUNGSMD256Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com 2)SAMSUNGSMD256Huandong Electronics Ltd.
Wed Sep 13 11:12:00 UTC 2006K557C3016-50 (from hkin.com 2)SAMSUNGSMD256Huandong Electronics Ltd.

Last record K4S641632H-UC60:

Post DatePart NumberBrandD/CDescQtyCompany
Tue Sep 19 17:38:00 UTC 2006K4S641632H-UC60 (from hkin.com)SAMSUNG05+TSOP6000SUNTON INT'L ELECTRONICS (UK) CO., LTD
Mon Sep 18 06:28:00 UTC 2006K4S641632H-UC60 (from hkin.com)SAMSUNG06+TSOP5430000Aosiwei Electronics Co.,Ltd.
Thu Sep 28 02:07:00 UTC 2006K4S641632H-UC60 (from hkin.com)SAMSUNG05+TSOP226FIGOER INT'L LIMITED

Last record K4S511632B-TC75:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Sep 29 01:19:00 UTC 2006K4S511632B-TC75 (from hkin.com)samsung0525935HongKong sunrise international co.,ltd

Last record K4H560838C-TLA2:

Post DatePart NumberBrandD/CDescQtyCompany
Tue Sep 19 17:36:00 UTC 2006K4H560838C-TLA2 (from hkin.com)SAMSUNG04+TSOP6680000SUNTON INT'L ELECTRONICS (UK) CO., LTD

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LEDs present many advantages over incandescent light sources including lower energy consumption, longer lifetime, improved robustness, smaller size, faster switching, and greater durability and reliability. New microarchitectures and/or circuitry solutions, along with advances in semiconductor manufacturing, are what allows newer generations of processors to achieve higher performance while using the same ISA. It has already completely replaced the bipolar transistor in power applications, and the availability of power modules (in which several IGBT dice are connected in parallel) makes it attractive for power levels up to several megawatts, pushing further the limit where thyristors and GTOs become the only option. In practice the dielectric between the plates passes a small amount of leakage current and also has an electric field strength limit, resulting in a breakdown voltage, while the conductors and leads introduce an undesired inductance and resistance. As of 2007, two 64-bit RISC architectures are still produced in volume for non-embedded applications: SPARC and Power ISA. Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a numberfrom a few (as low as two) to billionsof devices manufactured and interconnected on a single semiconductor substrate. This is driven by gains in manufacturing efficiency and automation, lower labor costs as manufacturing has moved to lower-wage countries, and improvements in semiconductor design. The MOSFET is particularly suited to this configuration because its positive thermal coefficient of resistance tends to balance current between individual devices.
any passive component and active component such as:Diode, Capacitors used as parts of electrical systems, for example, consist of metal foils separated by a layer of insulating film. A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. Several specialized processing devices have followed from the technology. Typically this will be a vacuum tube, or solid-state (transistor or operational amplifier). For example driver circuit
K557C3016-50,K557C3016-50,Comments from user about K557C3016-50: The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to precisely control the location and concentration of p- and n-type dopants. Thyristors are able to withstand very high reverse breakdown voltage and are also capable of carrying high current. Several specialized processing devices have followed from the technology., the power must be disconnected from the device. This can be seen in figure 2. One disadvantage of the thyristor for switching circuits is that once it is 'latched-on' in the conducting state it cannot be turned off by external control. IEEE standard 1076. An active filter is a type of analog electronic filter, distinguished by the use of one or more active components i. Anything related to :K557C3016-50, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: K557C3016-50See also: