Part: RC0201JR-073K9

Index Files

Offer Index 1

bb/ti,
marvell,
murata ps,
diodes,
silicon,
sst,
oki,
lattice,
mitsubis

 
Google Search

Part Numbers

Previous Parts:QMV863DT5,QMV98AQ1,QMV98CQ1,QS74FCT827BTSO,QSZ2,QUADRO4 NVS200,QUADRO4 NVS280,R16050-125,R4617,R6764-62,RA245D,RADI-820-850M-D,RB06,RB521S-30TE61,RB751S-40,RC0201JR-072K4

The followings are offers provided by our member in Electronic Components Offer site about the following parts: RC0201JR-073K9":

Post DatePart NumberBrandD/CDescQtyCompany
Fri Sep 15 06:31:00 UTC 2006RC0201JR-073K9 (from hkin.com)YAGEONew,original40000HUESPORT ELECTRONICS (H.K.) CO.,LIMITED
Fri Sep 15 06:31:00 UTC 2006RC0201JR-073K9 (from standard server 2)YAGEONew,original40000HUESPORT ELECTRONICS (H.K.) CO.,LIMITED
Fri Sep 15 06:31:00 UTC 2006RC0201JR-073K9 (from parts server 2)YAGEONew,original40000HUESPORT ELECTRONICS (H.K.) CO.,LIMITED
Fri Sep 15 06:31:00 UTC 2006RC0201JR-073K9 (from hkin.com 2)YAGEONew,original40000HUESPORT ELECTRONICS (H.K.) CO.,LIMITED
Fri Sep 15 06:31:00 UTC 2006RC0201JR-073K9 (from hkin.com 2)YAGEONew,original40000HUESPORT ELECTRONICS (H.K.) CO.,LIMITED

Last record RC0201JR-072K4:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Sep 15 06:31:00 UTC 2006RC0201JR-072K4 (from hkin.com)YAGEONew,original80000HUESPORT ELECTRONICS (H.K.) CO.,LIMITED

Last record RB751S-40:

Post DatePart NumberBrandD/CDescQtyCompany
Thu Sep 28 03:12:00 UTC 2006RB751S-40 (from hkin.com)ROHM05+SOD52330000DONG XIN TECHNOLOGY (HK) ELECTRONICS CO.
Sat Sep 30 01:20:00 UTC 2006RB751S-40 (from hkin.com)ROHM2005SOD-32390000ShenZhen XinHengChang Electronics Co.,
Thu Aug 31 01:10:00 UTC 2006RB751S-40 (from hkin.com)10000HOVER INT'L ELECTRONICS CO.,LTD
Mon Sep 11 04:17:00 UTC 2006RB751S-40 (from hkin.com)ROHM0630000ShenZhen KaiRuiFu Electronics Trading Company
Wed Sep 20 06:03:00 UTC 2006RB751S-40 (from hkin.com)ROHM05+SOD323120000FOREVER TECHNOLOGIES ELECTRONIC COMPANY LIMITED
Mon Oct 2 03:20:00 UTC 2006RB751S-40 (from hkin.com)ROHMDIODE SCHOTTKY_30mA/30V_SOD-5233104Micrologic International Corp

Last record RB521S-30TE61:

Post DatePart NumberBrandD/CDescQtyCompany
Sat Sep 16 06:02:00 UTC 2006RB521S-30TE61 (from hkin.com)SEIKO05+10000ShenZhen Wonderful Electronics Co., Ltd.

If you want to find more about RC0201JR-073K9, please visit us on HKin


vid:offerengine20111021

RC0201JR-073K9,RC0201JR-073K9,Comments from user about RC0201JR-073K9: For high-pass and low-pass (as well as band-pass filters far from the center frequency), the required rejection may determine the slope of attenuation needed, and thus the "order" of the filter. The desire for High definition (HD) content has led the industry to develop a number of technologies, such as WirelessHD or ITU-T G. However, many formational and functional block parameters can be tuned (capacity parameters, memory size, element base, block composition and interconnection structure). Some other standards support wider use of VHDL, notably VITAL (VHDL Initiative Towards ASIC Libraries) and microwave circuit design extensions. A microprocessor control program can be easily tailored to different needs of a product line, allowing upgrades in performance with minimal redesign of the product. This is the ratio of the electric charge on each conductor to the potential difference between them. For instance, a resonant series LC circuit will have unbounded voltage output for a bounded voltage input, but will be stable in the sense of Lyapunov, and given bounded energy input will have bounded energy output. When a doped semiconductor contains excess holes it is called "p-type", and when it contains excess free electrons it is known as "n-type", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. Anything related to :RC0201JR-073K9, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: RC0201JR-073K9, search hkinventory: RC0201JR-073K9, The MOSFET is particularly suited to this configuration because its positive thermal coefficient of resistance tends to balance current between individual devices. An ideal capacitor is characterized by a single constant value, capacitance, measured in farads.Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. Datasheet Dir, DataSheet Archive
Energy is stored in the electrostatic field. Microprocessors integrated into one or a few large-scale ICs the architectures that had previously been implemented using many medium- and small-scale integrated circuits. The ALU performs operations such as addition, subtraction, and operations such as AND or OR. MOSFET is an IC which is semiconductor device. An ideal capacitor is characterized by a single constant value, capacitance, measured in farads. The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. The integration of large numbers of tiny transistors into a small chip was an enormous improvement over the manual assembly of circuits using electronic components. The pipelined datapath is the most commonly used datapath design in microarchitecture today.
any passive component and active component such as:Diode, Light-emitting diodes are used in applications as diverse as replacements for aviation lighting, automotive lighting (particularly brake lamps, turn signals and indicators) as well as in traffic signals.0 to the IEEE for balloting for inclusion in IEEE 1076-2008. This CPU cache has the advantage of faster access than off-chip memory, and increses the processing speed of the system for many applications. Some other standards support wider use of VHDL, notably VITAL (VHDL Initiative Towards ASIC Libraries) and microwave circuit design extensions. For example driver circuit
RC0201JR-073K9,RC0201JR-073K9,Comments from user about RC0201JR-073K9: During the 1960s, computer processors were constructed out of small and medium-scale ICs each containing from tens to a few hundred transistors. Ternary (with three states) logic has been studied, and some prototype computers made. Because the cores are physically very close to each other, they can communicate with each other much faster than separate processors in a multiprocessor system, which improves overall system performance. This type of circuit is usually called "mixed signal" rather than analog or digital. One overriding characteristic of consumer electronic products is the trend of ever-falling prices. Power semiconductor devices first appeared in 1952 with the introduction of the power diode by R. It is relatively easy for an inexperienced developer to produce code that simulates successfully but that cannot be synthesized into a real device, or is too large to be practical. Such a model is processed by a synthesis program, only if it is part of the logic design. Anything related to :RC0201JR-073K9, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: RC0201JR-073K9See also: