Description
25 C, unless otherwise specified. Symbol Conditions min. typ. max. Units. IGBT. VGE(th). VGE = VCE, IC = 2 m%. 4,5. 5,5. 6,5. V. ICES. VGE = 0 V, VCE = VCES. 20 years ago the MiniSKiiP was born. A unique design, setting a new standard in the power electronics world: solder-free PCB assembly using spring contacts Switches faster than IGBT4 (di/dton values) if the same gate resistor values are used, resulting in less Eon losses. If di/dton is in the same range as IGBT4, the MOSFETs with power ratings of up to IC = 150 A and. Drives IGBTs up to IC = 150 A, VCE = 600 V. VCE = 600 V. Input TTL logic and output power stage. Its the lowest frequency compatible with the applications requirements for performance and cost. Operation at higher frequencies: - increases component losses.
Part Number | SKM100GB125DN |
Brand | |
Image |
SKM100GB125DN
TI
30000
0.75
HK JDW ELECTRONIC CO., LIMITED
SKM100GB125DN
SEMIKRON
160
2.1625
HK FEILIDI ELECTRONIC CO., LIMITED
SKM100GB125DN
SEMIKRON
6880
3.575
ZHONGGANG TECHNOLOGY (HK) INDUSTRY LIMITED
SKM100GB125DN
SEMIKRON
3076
4.9875
HAODE TECHNOLOGY CO.,LIMITED
SKM100GB125DN
SEMIKRON
2056
6.4
CIS Ltd (CHECK IC SOLUTION LIMITED)