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SKM195GB066D . Features. Homogeneous Si. Trench = Trenchgate technology. V. CE(sat) with positive temperature coefficient. High short SKM195GB066D consisting of IGBTs is presented. As discussed in the earlier technical section, the IGBT module selected and finalised towards taking for SKM195GB066D . Order. 11252107. 01/19/2021. 8. 2423691. 22890435. SKM800GA176D. Order. 11286955. 02/07/2021. 15. 2749604. 22890620. SKM200GB125D. Overview. Paralleling IGBTs become necessary for power conversion equipment with higher output power ratings, where a single IGBT cannot provide the. Zvolil jsem tranzistor SKM195GB066D , ztr ty po prost m dosazen hodnot z katalogu [8], [8] SKM195GB066D datasheet [online] Semikron 2014. Dostupn z: http://