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Description
IRFP150N . HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low IRFP150N . HEXFET Power MOSFET www.artschip.com. 1. FEATURES. Avalanche Process Technology. Dynamic dv/dt Rating. 175 Operating Document Number: 91203 www.vishay.com. S11-0446-Rev. B, 14-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED Avalanche Rugged Technology. Rugged Gate Oxide Technology. Lower Input Capacitance. Improved Gate Charge. Extended Safe Operating Area. Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel. MOSFET branches are mapped over wide
| Part Number | IRFP150N |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 100V 42A TO-247AC |
| Series | HEXFET |
| Packaging | Bulk |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 23A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Image |  |
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