Description
IRFP250NPbF . HEXFET Power MOSFET. 08/18/10. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 30. ID @ TC = 100 C. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
Part Number | IRFP250NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET N-CH 200V 30A TO-247AC |
Series | HEXFET |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2159pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
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