(5/5) based on 14 customer reviews
Description
Jul 31, 2013 IPD50R399CP . Parameter. Symbol Conditions. Unit min. typ. max. Dynamic characteristics. DFJI97F79?I7D9;. C \ee. (. 34+. (. cA. - JIFJI97F79 1. 2. 3. Material Content Data Sheet. Sales Product Name. IPD50R399CP . Issued . 29. August 2013. MA#. MA001145778. Package. PG-TO252-3-313. Weight*. Feb 16, 2015 IPD50R399CP . M1. 22R. 1206. 1%. R11A. 22R. 1206. 1%. R11B. GND. 499k. 1206. 1%. R6A. 499k. 1206. 1%. R6B. 1A / 600V. STTH1L06A. IPD50R399CP . M1. 22R. 1206. 1%. R11A. 22R. 1206. 1%. R11B. GND. 499k. 1206. 1%. R6A. 499k. 1206. 1%. R6B. 1A / 600V. STTH1L06A. D1. 47uF. 350V. IPA50R350CP. 10.0. 22. 0.350. n.a.. 19. IPA50R299CP. 12.0. 26. 0.299. n.a.. 23. 2.5 3.5. IPD50R520CP. 7.0. 15. 0.520. n.a.. 13. 2.5 3.5. IPD50R399CP . 9.0.
| Part Number | IPD50R399CP |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 550V 9A TO-252 |
| Series | CoolMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 550V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 100V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 399 mOhm @ 4.9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
IPD50R399CP(3)
INFINEON
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0.73
Shenzhen Palmcore Technology Co. Ltd.
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Shenzhen Kesheng Shunyuan Electronics Co., Ltd.
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2.46
HongKong XingYiLong Electronic Technology Co., Limited
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3.325
USEMI LIMITED
IPD50R399CP 5R399P
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11996
4.19
CIS ELECTRONIC CO.,LTD
