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Description
Datasheet Jul 16, 2013 Metal Oxide Semiconductor Field Effect Transistor. CoolMOS CE. 500V CoolMOS CE Power Transistor. IPD50R380CE . Data Sheet. Rev. 1. 2. 3. Material Content Data Sheet. Sales Product Name. IPD50R380CE . Issued . 15. October 2014. MA#. MA001182288. Package. PG-TO252-3-313. Weight*. IPA50R380CE IPD50R380CE IPP50R380CE. 280. IPA50R280CE. IPD50R280CE IPP50R280CE IPW50R280CE. 190. IPA50R190CE. IPP50R190CE. IPP50R500CE. 380 m . IPA50R380CE. IPD50R380CE . IPP50R380CE. 280 m . IPA50R280CE. IPD50R280CE. IPP50R280CE. IPW50R280CE. 190 m . IPD50R380CE . IPP50R380CE. IPA50R380CE. 280. IPD50R280CE. IPP50R280CE. IPA50R280CE. IPW50R280CE. 190. IPP50R190CE. IPA50R190CE.
| Part Number | IPD50R380CE |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N CH 500V 9.9A PG-TO252 |
| Series | CoolMOS |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | 24.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 584pF @ 100V |
| Vgs (Max) | - |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 73W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 13V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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