(5/5) based on 14 customer reviews
Description
DATASHEET Dec 1, 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU. N-Channel QFET. . MOSFET . This N-Channel enhancement mode power MOSFET is. 90 ~ 300 VAC. 88%. 89%. 90%. 91%. 92%. 90Vac. 120Vac 140Vac 180Vac 230Vac 265Vac 300Vac. FCPF850N80Z. FCPF1300N80Z. FQPF8N80C . Efficiency Oct 16, 2015 FQPF8N80C . R16. R17. 0.2 . 0.2 . 0 . R11. C5. NS. PC817. PC817. D4. FR107. C1. 220nF. R4. 13.3k . C2. 2.2nF. C3. 22 F. D1. BZT52C18. Aug 5, 2010 Therefore, an N-Channel enhancement-mode MOSFET,. FQPF8N80C (800V, 8A, RDS_ON = 1.55 ), is chosen in consideration of the margins. Nov 13, 2013 Film Res., 5%. 0603. Royalohm 0603J0000T5E. 1. Q1. MOSFET, 8A, 800V. TO- 220. FQPF8N80C . 1. Q2. Transistor, 0.5V, 25V. SOT-23. S8050.
| Part Number | FQPF8N80C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 800V 8A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 59W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55 Ohm @ 4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
FQPF8N80C
ON
1400
0.63
Hong Kong In Fortune Electronics Co., Limited
FQPF8N80C
ON
5000
1.9125
FOREST INTERCONTINENTAL COMPANY LIMITED
FQPF8N80C
ON
30000
3.195
Hong Kong YouWei Electronics Limited
FQPF8N80C
onsemi
5000
4.4775
JINGCHENG HK LIMITED
FQPF8N80C
FAIRCHILD/
12185
5.76
N&S Electronic Co., Limited
