Description
DATASHEET Jan 8, 2016 FQP4N90C . TO220-3 (93.5-5-. 1.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.033009 g. Each. Manufacturing Process Information. Terminal Finish. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP4N90C . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ.
Part Number | FQP4N90C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET N-CH 900V 4A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
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