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Description
Jan 13, 2017 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP12N60C . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. FQP12N60C : N-Channel QFET MOSFET. For complete documentation, see the data sheet. These N-Channel enhancement mode power field effect transistors Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FQP12N60C . FQP12N60C . Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power helping to meet the ever-increasing 1.2 M. FQP1N60. Q3. 1. C2. 0.1 F. Vref. Shutdown. Q2. MMBT2222ALT1. 12 k. R26. R25. 4.7 k. 0 V - ON. 5 V - OFF. MUR460. D7. 100 F. C25. FQP12N60 . Q1.
| Part Number | FQP12N60C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 600V 12A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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