Description
MOSFET N-CH 200V 7.8A DPAK Series: QFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: TO-252-3, DPak (2 Leads + Tab), SC-63 Connector Type: TO-252-3 Function: Logic Type: Number of Channels: Proto Board Type: Resistance (Ohms): Voltage - Off State: Circuit: Direction: Inputs - Side 1/Side 2:
Part Number | FQD10N20CTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET N-CH 200V 7.8A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
Hot Offer
FQD10N20CTM
550
1.43
Yingxinyuan INT'L (Group) Limited
FQD10N20CTM
ON
550
2.4975
Yingxinyuan INT'L (Group) Limited
FQD10N20CTM
ONSEMI
25000
3.565
CHANY JA ELECTRONICS (HK) CO.,LIMITED
FQD10N20CTM
ON
11838
4.6325
Guofanghui (Hong Kong) Technology Co., Limited
FQD10N20CTM
12000
5.7
JINRUIXIN TECHNOLOGY (HONG KONG) LIMITED