(5/5) based on 1 customer reviews
Description
Apr 29, 2013 BSC050NE2LS . OptiMOSTM. Power-MOSFET. Features. Optimized for high performance Buck converter. Very low on-resistance R DS(on) . . . . . m. . 2. 3.3u. L5. 4.02k . R60. 4.02k. R61. D. BSC050NE2LS . VT13. G. D. S. D. BSC050NE2LS . VT14. 2. 3. Material Content Data Sheet. Sales Product Name. BSC050NE2LS . Issued. 28. July 2015. MA#. MA001014390. Package. PG-TDSON-8-6. Weight*. 93% peak efficiency and >90% full load efficiency is demonstrated with new OptiMOS 25V products in SuperSO8 package. (HighSide: BSC050NE2LS ;. Jul 13, 2012 GH = 1 x BSC050NE2Ls . GL = 2 x BSC010NE2LS. VOUT = 3.3V. VOUT = 1.0V. VOUT = 1.5V. VOUT = 1.2V. VOUT = 1.8V. VOUT = 2.5V. fSW =
| Part Number | BSC050NE2LS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 25V 39A TDSON-8 |
| Series | OptiMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image |  |
Hot Offer
BSC050NE2LS
INFINEON
5000
0.33
HEXING TECHNOLOGY (HK) LIMITED
BSC050NE2LS
Infineon(英飞凌)
1130
0.7925
ALLCHIPS ELECTRONICS LIMITED
BSC050NE2LS
INFINEON/MOSLEADER
50688
1.255
Shenzhen High Quality Electronic Semiconductor Co., Ltd
BSC050NE2LS
INFINEON
38000
1.7175
CIS Ltd (CHECK IC SOLUTION LIMITED)
BSC050NE2LS
INFINEON
39000
2.18
Ande Electronics Co., Limited
