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Jan 18, 2013 BSC028N06NS . OptiMOS. TM. Power-Transistor. Features. Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested. May 4, 2012 and BSC028N06NS would be suitable. And, actually, since losses are still below 1W over a broader range. (0.55 m to 3.9 m ), selecting the BSC028N06NS . Technologies. Q6, Q8. Infineon. 0. MOSFET, N-CH, 25 V, 100 A, TDSON-8. BSC014NELSI. Technologies. 16. SNVU465 February 2015. Jan 1, 2017 of an SBG2040CT Schottky diode to a BSC028N06NS MOSFET. At 20A, the. BSC028N06NS 2.8m MOSFET dissipates only 1W, saving 8W of Standard Solution. Optimized Solution. Low Voltage MOSFETs. 24V. IPD034N06N3 G. BSC028N06NS . 36V. IPD053N08N3 G. BSC047N08NS3 G. 48V.