Part: TPS61016DGSR

Index Files

Offer Index 51

FUJITSU,
NA,
AGILENT,
NUMONYX,
AUO,
FMD,
NATIONAL,
RAMTRON,
SEMTECH,
IMP,
BGA,
TI,
INFINEON,
ST,
MAX,
NS,
AD,
ON,
ATMEL,
IR,
XILINX,
TOS,
CY,
ALTERA,
NXP,
FSC,
VISHAY,
MURATA,
NEC,
ROHM,
POWER,
LINEAR,
SAMSUNG,
FREESCALE,
MOT,
DALLAS,
MICROCHIP,
MIT,
PHI,
BB

 
Google Search

Product Summary
TPS61016DGSR
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: TPS61016DGSR.


Available from: Gabriel Electronics (HK) Co., Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:TIM7179-8UL, TL494IDR, TLE4729G, TLE6236G, TLE6368R, TLLB3, TMA4410DJ, TMC1175AN2C20, TMPZ84C011BF-6, TMS320D610A003PYP, TMS320VC33PGE150, TMX320C50PQ80, TN1215-600G-TR, TNY263PN, TOP200Y, TPS40192DRCT

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: TPS61016DGSR":

Post DatePart NumberBrandD/CDescQtyCompany
Thu Jan 12 00:41:00 UTC 2012TPS61016DGSR (from hkin.com)04+5000Gabriel Electronics (HK) Co., Limited
Thu Jan 12 00:41:00 UTC 2012TPS61016DGSR (from standard server 2)04+5000Gabriel Electronics (HK) Co., Limited
Thu Jan 12 00:41:00 UTC 2012TPS61016DGSR (from parts server 2)04+5000Gabriel Electronics (HK) Co., Limited
Thu Jan 12 00:41:00 UTC 2012TPS61016DGSR (from hkin.com 2)04+5000Gabriel Electronics (HK) Co., Limited
Thu Jan 12 00:41:00 UTC 2012TPS61016DGSR (from hkin.com 2)04+5000Gabriel Electronics (HK) Co., Limited

Last record TPS40192DRCT:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 08:56:00 UTC 2012TPS40192DRCT (from hkin.com)BB/TI09+QFN1010761Hongkong Jeanway Technologies Limited

Last record TOP200Y:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 6 06:24:00 UTC 2012TOP200YN (from hkin.com)power05+TO220500HK Ronghao Electronics Co., Limited
Sat Jan 14 04:17:00 UTC 2012TOP200Y (from hkin.com)04+TO220/3POWER500Yakoda HK Co.,Ltd

Last record TNY263PN:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Jan 11 03:17:00 UTC 2012TNY263PN (from hkin.com)Power2011+12500Wangsheng Technology (HK) Limited
Wed Jan 11 03:23:00 UTC 2012TNY263PN (from hkin.com)Power2011+DIP-812500Huichuang Electronics (HK) Limited

If you want to find more about TPS61016DGSR, please visit us on HKin


vid:offerengine20120117

TPS61016DGSR,TPS61016DGSR,Comments from user about TPS61016DGSR: As integrated circuit technology advanced, it was feasible to manufacture more and more complex processors on a single chip. Some common power devices are the power diode, thyristor, power MOSFET and IGBT. On average, every fifth instruction executed is a branch, so without any intervention, that's a high amount of stalling. Computers, cellular phones, and other digital appliances are now inextricable parts of the structure of modern societies, made possible by the low cost of production of integrated circuits. New microarchitectures and/or circuitry solutions, along with advances in semiconductor manufacturing, are what allows newer generations of processors to achieve higher performance while using the same ISA. Thyristors are able to withstand very high reverse breakdown voltage and are also capable of carrying high current. The updated IEEE 1076, in 1993, made the syntax more consistent, allowed more flexibility in naming, extended the character type to allow ISO-8859-1 printable characters, added the xnor operator, etc. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2011, can use as many as 3 billion transistors (MOSFETs). Anything related to :TPS61016DGSR, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: TPS61016DGSR, search hkinventory: TPS61016DGSR, The move to 64 bits is more than just an increase in register size from the IA-32 as it also doubles the number of general-purpose registers. Small circuit breakers may be manually operated; larger units have solenoids to trip the mechanism, and electric motors to restore energy to the springs.[citation needed] The R3000 made the design truly practical, and the R4000 introduced the world's first commercially available 64-bit RISC microprocessor. When a light-emitting diode is forward biased (switched on), electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. Datasheet Dir, DataSheet Archive
This creates a much larger current between the collector and emitter, controlled by the base-emitter current. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. Actually, all power semiconductors rely on a PIN diode structure to sustain voltage.[specify] Minor changes in the standard (2000 and 2002) added the idea of protected types (similar to the concept of class in C++) and removed some restrictions from port mapping rules. Unlike a fuse, which operates once and then has to be replaced, a circuit breaker can be reset (either manually or automatically) to resume normal operation.Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material. His chip solved many practical problems that Kilby's had not. This includes decisions on the performance-level and connectivity of these peripherals.
any passive component and active component such as:Diode, Competing projects would result in the IBM POWER and Sun SPARC architectures. While 64-bit microprocessor designs have been in use in several markets since the early 1990s, the early 2000s saw the introduction of 64-bit microprocessors targeted at the PC market. Machines with different microarchitectures may have the same instruction set architecture, and thus be capable of executing the same programs. Bipolar junction transistors are formed from two p-n junctions, in either n-p-n or p-n-p configuration. For example driver circuit
TPS61016DGSR,TPS61016DGSR,Comments from user about TPS61016DGSR: Its major limitation for low voltage applications is the high voltage drop it exhibits in on-state (2 to 4 V). Basically, an IGBT is a bipolar transistor driven by a power MOSFET: it has the advantages of being a minority carrier device (good performance in on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power). The other regions, and their associated terminals, are known as the emitter and the collector. It is relatively easy for an inexperienced developer to produce code that simulates successfully but that cannot be synthesized into a real device, or is too large to be practical. This equation is linear with respect to temperature. One barrier to achieving higher performance through instruction-level parallelism stems from pipeline stalls and flushes due to branches. Common-emitter amplifiers are also used in radio frequency circuits, for example to amplify faint signals received by an antenna. Generally, in datasheets, turn-off energy is mentioned as a measured parameter and one has to multiply that number with the switching frequency of the intended application to estimate the turn-off loss. Anything related to :TPS61016DGSR, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: TPS61016DGSRSee also: