Part: P80C51FA-5A

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P80C51FA-5A
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: P80C51FA-5A.


Available from: Nortion Technology (HK) Co.,Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:MMSZ22T1G, MC33167T, EPM3128ATC144-11N, IMP1117AS18T, MT4LC2M8E77G-6, LM285MX-2.5, AN5265, DM54LS154J/883, R-CHIP-1 OHM, DS17285-3, LM4674TLX, BH9596FP, S102S01, F101G-89, ECQE2W225KH, EPF10K50SQC240-1N

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: P80C51FA-5A":

Post DatePart NumberBrandD/CDescQtyCompany
Fri Dec 9 09:44:00 UTC 2011P80C51FA-5A (from hkin.com)07+DIP402000Nortion Technology (HK) Co.,Limited
Fri Dec 9 09:44:00 UTC 2011P80C51FA-5A (from standard server 2)07+DIP402000Nortion Technology (HK) Co.,Limited
Fri Dec 9 09:44:00 UTC 2011P80C51FA-5A (from parts server 2)07+DIP402000Nortion Technology (HK) Co.,Limited
Fri Dec 9 09:44:00 UTC 2011P80C51FA-5A (from hkin.com 2)07+DIP402000Nortion Technology (HK) Co.,Limited
Fri Dec 9 09:44:00 UTC 2011P80C51FA-5A (from hkin.com 2)07+DIP402000Nortion Technology (HK) Co.,Limited

Last record EPF10K50SQC240-1N:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 9 05:00:00 UTC 2012EPF10K50SQC240-1N (from hkin.com)ALTERA07+QFP240821H.K New Kasion Electronic Co.,Limited

Last record ECQE2W225KH:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Dec 21 01:45:00 UTC 2011ECQE2W225KH (from hkin.com)10+CAP,2.2UF,450V,MPF,10%8082East-port Micro-Tech Electronics Ltd

Last record F101G-89:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 9 01:29:00 UTC 2012F101G-89 (from hkin.com)WJ10+SOT-891862Zhengxinyuan Electronics (HK) Co., Limited

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P80C51FA-5A,P80C51FA-5A,Comments from user about P80C51FA-5A: The main reason why semiconductor materials are so useful is that the behavior of a semiconductor can be easily manipulated by the addition of impurities, known as doping. The MOSFET is particularly suited to this configuration because its positive thermal coefficient of resistance tends to balance current between individual devices. While this required extra logic to handle, for example, carry and overflow within each slice, the result was a system that could handle, say, 32-bit words using integrated circuits with a capacity for only 4 bits each. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the gA range). The integrated circuit processor was produced in large numbers by highly automated processes, so unit cost was low. Being created for one element base, a computing device project can be ported on another element base, for example VLSI with various technologies. These techniques use convection, conduction, & radiation of heat energy. Analog circuits use a continuous range of voltage as opposed to discrete levels as in digital circuits. Anything related to :P80C51FA-5A, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: P80C51FA-5A, search hkinventory: P80C51FA-5A, The other regions, and their associated terminals, are known as the emitter and the collector. This type of circuit is usually called "mixed signal" rather than analog or digital.6 defines a subset of the language that is considered the official synthesis subset. When a light-emitting diode is forward biased (switched on), electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. Datasheet Dir, DataSheet Archive
Graphics processing units may have no, limited, or general programming facilities. A second-order all-pole filter gives an ultimate slope of about 12 dB per octave (40dB/decade), but the slope close to the corner frequency is much less, sometimes necessitating a notch be added to the filter. When a doped semiconductor contains excess holes it is called "p-type", and when it contains excess free electrons it is known as "n-type", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. Noyce also came up with his own idea of an integrated circuit half a year later than Kilby. Compared to the MOSFET, the operating frequency of the IGBT is relatively low (few devices are rated over 50 kHz), mainly because of a so-called 'current-tail' problem during turn-off. Sun Microsystems has released the Niagara and Niagara 2 chips, both of which feature an eight-core design. The circuit can be made to change state by signals applied to one or more control inputs and will have one or two outputs. Competing projects would result in the IBM POWER and Sun SPARC architectures.
any passive component and active component such as:Diode, Bipolar junction transistors are formed from two p-n junctions, in either n-p-n or p-n-p configuration. Although several companies each produce over a billion individually packaged (known as discrete) transistors every year, the vast majority of transistors now produced are in integrated circuits (often shortened to IC, microchips or simply chips), along with diodes, resistors, capacitors and other electronic components, to produce complete electronic circuits. This effect is called electroluminescence and the color of the light (corresponding to the energy of the photon) is determined by the energy gap of the semiconductor. An electronic circuit consisting entirely of passive components is called a passive circuit (and has the same properties as a passive component). For example driver circuit
P80C51FA-5A,P80C51FA-5A,Comments from user about P80C51FA-5A: Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to precisely control the location and concentration of p- and n-type dopants. The range of desired frequencies (the passband) together with the shape of the frequency response. This effect is called electroluminescence and the color of the light (corresponding to the energy of the photon) is determined by the energy gap of the semiconductor. The trade-off between voltage, current and frequency ratings also exists for the switches. Once a fault is detected, contacts within the circuit breaker must open to interrupt the circuit; some mechanically-stored energy (using something such as springs or compressed air) contained within the breaker is used to separate the contacts, although some of the energy required may be obtained from the fault current itself. Similarly, an overdriven transistor amplifier can take on the characteristics of a controlled switch having essentially two levels of output. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. Anything related to :P80C51FA-5A, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: P80C51FA-5ASee also: