Part: S80C196XL-12

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Offer Index 26

SILICON,
MURATAPS,
LATTICE,
COILCRAFT,
NEMIC-LAMBDA,
SEMIKRON,
ISD,
SST,
WINBOND,
BCD

 
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Product Summary
08+ S80C196XL-12
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: S80C196XL-12.


Available from: Aoxiang Technology Electronic International Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:QG82915GM, QG82945GMS SL8TC, QG82945PM, REF2925AIDBZR, REG102NA-2.8, RK46, ROF 131 4446/1 R6A, ROF 131 698/2 R1K, ROF 131 799/1 R6B, ROF 137 7443/1 R1B, ROJ 207 009/1 R3B, ROJ 207 012/6 R1A, RY12W-K, S1D15206F00A200, S8050C, S-80830SN-DT

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: S80C196XL-12":

Post DatePart NumberBrandD/CDescQtyCompany
Wed Jan 11 02:26:00 UTC 2012S80C196XL-12 (from hkin.com)08+QFP80INTEL1627Aoxiang Technology Electronic International Limited
Wed Jan 11 02:26:00 UTC 2012S80C196XL-12 (from standard server 2)08+QFP80INTEL1627Aoxiang Technology Electronic International Limited
Wed Jan 11 02:26:00 UTC 2012S80C196XL-12 (from parts server 2)08+QFP80INTEL1627Aoxiang Technology Electronic International Limited
Wed Jan 11 02:26:00 UTC 2012S80C196XL-12 (from hkin.com 2)08+QFP80INTEL1627Aoxiang Technology Electronic International Limited
Wed Jan 11 02:26:00 UTC 2012S80C196XL-12 (from hkin.com 2)08+QFP80INTEL1627Aoxiang Technology Electronic International Limited

Last record S-80830SN-DT:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Dec 28 03:02:00 UTC 2011S-80830SN-DT (from hkin.com)S.I04+SOT-22319696Ared Elec Co.,Limited

Last record S8050C:

Post DatePart NumberBrandD/CDescQtyCompany
Thu Jan 5 02:43:00 UTC 2012S8050C (from hkin.com)FSC11+200000Qier Technology (HK) Limited

Last record S1D15206F00A200:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Jan 11 10:51:00 UTC 2012S1D15206F00A200 (from hkin.com)EPSON09+QFP200Ho-Sky(HK) Electronics Technology Co.,Limited

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S80C196XL-12,S80C196XL-12,Comments from user about S80C196XL-12: Its basic function is to detect a fault condition and, by interrupting continuity, to immediately discontinue electrical flow. With the ability to put large numbers of transistors on one chip, it becomes feaible to integrate memory on the same die as the processor. Microprocessor control of a system can provide control strategies that would be impractical to implement using electromechanical controls or purpose-built electronic controls. LEDs present many advantages over incandescent light sources including lower energy consumption, longer lifetime, improved robustness, smaller size, faster switching, and greater durability and reliability. Most digital circuits use a binary system with two voltage levels labeled "0" and "1". The compact size, the possibility of narrow bandwidth, switching speed, and extreme reliability of LEDs has allowed new text and video displays and sensors to be developed, while their high switching rates are also useful in advanced communications technology. Used without qualifier, the term passive is ambiguous. For example, GPUs through the 1990s were mostly non-programmable and have only recently gained limited facilities like programmable vertex shaders. Anything related to :S80C196XL-12, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: S80C196XL-12, search hkinventory: S80C196XL-12, RISC microprocessors were initially used in special-purpose machines and Unix workstations, but then gained wide acceptance in other roles. Microprocessors integrated into one or a few large-scale ICs the architectures that had previously been implemented using many medium- and small-scale integrated circuits. Generally, in datasheets, turn-off energy is mentioned as a measured parameter and one has to multiply that number with the switching frequency of the intended application to estimate the turn-off loss. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to precisely control the location and concentration of p- and n-type dopants. Datasheet Dir, DataSheet Archive
In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the gA range). The range of desired frequencies (the passband) together with the shape of the frequency response. The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The junctions which form where n-type and p-type semiconductors join together are called p-n junctions. A simulation program is used to test the logic design using simulation models to represent the logic circuits that interface to the design. This equation is linear with respect to temperature.
any passive component and active component such as:Diode, As of 2007, two 64-bit RISC architectures are still produced in volume for non-embedded applications: SPARC and Power ISA. Because the cores are physically very close to each other, they can communicate with each other much faster than separate processors in a multiprocessor system, which improves overall system performance. The other regions, and their associated terminals, are known as the emitter and the collector. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum. For example driver circuit
S80C196XL-12,S80C196XL-12,Comments from user about S80C196XL-12: This includes decisions on the performance-level and connectivity of these peripherals. The number of different analog circuits so far devised is huge, especially because a 'circuit' can be defined as anything from a single component, to systems containing thousands of components. The power MOSFET has the advantages of the majority carrier devices, so it can achieve very high operating frequency, but can't be used with high voltages. In addition, passive circuits will not necessarily be stable under all stability criteria. In reality one side or the other of the branch will be called much more often than the other. Actually, all power semiconductors rely on a PIN diode structure to sustain voltage. Its basic function is to detect a fault condition and, by interrupting continuity, to immediately discontinue electrical flow. The first microprocessors emerged in the early 1970s and were used for electronic calculators, using binary-coded decimal (BCD) arithmetic on 4-bit words. Anything related to :S80C196XL-12, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: S80C196XL-12See also: