Part: 45DB041B-SI

Index Files

Offer Index 26

MAX,
NS,
AD,
ON,
ATMEL,
IR,
XILINX,
TOS,
CY,
ALTERA,
NXP,
FSC,
VISHAY,
MURATA,
NEC,
ROHM,
POWER,
LINEAR,
SAMSUNG,
FREESCALE,
MOT,
DALLAS,
MICROCHIP,
MIT,
BB,
PHI,
INTEL,
PANASONIC,
ALLEGRO,
IXYS,
WJ,
FUJI,
RENESAS,
INTERSIL,
AMD,
YAGEO,
MPS,
AVAGO,
SIEMENS,
SHARP

 
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Product Summary
Microchip 45DB041B-SI
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: 45DB041B-SI.


Available from: Rs (Int'l) Electronics Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:16CTQ100, 1GC1-4209, 1MBI400NA-120, 1N4148W, 1N4148WS, 200N3S, 216CNP4AKA21HK, 24C128, 28F640J3C120, 2MBI150SC-120, 2SC3423, 2SC3583, 2SD1047, 2SK4075, 3266W, 39-01-2025

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: 45DB041B-SI":

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 16 02:18:00 UTC 201245DB041B-SI (from hkin.com)Microchip20098000Rs (Int'l) Electronics Limited
Mon Jan 16 02:18:00 UTC 201245DB041B-SI (from standard server 2)Microchip20098000Rs (Int'l) Electronics Limited
Mon Jan 16 02:18:00 UTC 201245DB041B-SI (from parts server 2)Microchip20098000Rs (Int'l) Electronics Limited
Mon Jan 16 02:18:00 UTC 201245DB041B-SI (from hkin.com 2)Microchip20098000Rs (Int'l) Electronics Limited
Mon Jan 16 02:18:00 UTC 201245DB041B-SI (from hkin.com 2)Microchip20098000Rs (Int'l) Electronics Limited

Last record 39-01-2025:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 01:55:00 UTC 201239-01-2025 (from hkin.com)MOLEX2010.074000Shenzhen Everbell Technology Co.Ltd
Mon Jan 16 01:13:00 UTC 201239-01-2025 (from hkin.com)2010.07(4k)/2010.09/2010.05(9k)/2010.11(10k)23000Lungke Electronics Technology Co., Limited

Last record 3266W:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Jan 11 01:31:00 UTC 20123266W-1-102LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-103LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-104LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-201LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-202LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-203LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-501LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-502LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited
Wed Jan 11 01:31:00 UTC 20123266W-1-503LF (from hkin.com)BOURNSROHSNew&Original10000Ontech Electronics International Limited

Last record 2SK4075:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 9 02:06:00 UTC 20122SK4075 (from hkin.com)NEC09+TO-25210000Fortune Micro-Electronics Company

If you want to find more about 45DB041B-SI, please visit us on HKin


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45DB041B-SI,45DB041B-SI,Comments from user about 45DB041B-SI: In the mid-1980s to early-1990s, a crop of new high-performance Reduced Instruction Set Computer (RISC) microprocessors appeared, influenced by discrete RISC-like CPU designs such as the IBM 801 and others. A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Transistorized mechatronic circuits have replaced electromechanical devices in controlling appliances and machinery. Basically, an IGBT is a bipolar transistor driven by a power MOSFET: it has the advantages of being a minority carrier device (good performance in on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power). In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information. A problem not solved by this edition, however, was "multi-valued logic", where a signal's drive strength (none, weak or strong) and unknown values are also considered. The complexity of an integrated circuit is bounded by physical limitations of the number of transistors that can be put onto one chip, the number of package terminations that can connect the processor to other parts of the system, the number of interconnections it is possible to make on the chip, and the heat that the chip can dissipate. Analog circuits use a continuous range of voltage as opposed to discrete levels as in digital circuits. Anything related to :45DB041B-SI, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: 45DB041B-SI, search hkinventory: 45DB041B-SI, However, its excellent performance in low voltage make it the device of choice (actually the only choice) for applications below 200 V. Flip-flops and latches are used as data storage elements. IEEE 1076. Keeping up with Moore's Law is becoming increasingly challenging as chip-making technologies approach their physical limits. Datasheet Dir, DataSheet Archive
Common-emitter amplifiers are also used in radio frequency circuits, for example to amplify faint signals received by an antenna. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the gA range). For notch filters, the degree to which unwanted signals at the notch frequency must be rejected determines the accuracy of the components, but not the Q, which is governed by desired steepness of the notch, i. The integrated circuit's mass production capability, reliability, and building-block approach to circuit design ensured the rapid adoption of standardized ICs in place of designs using discrete transistors.Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. This can yield better performance when the guess is good, with the risk of a huge penalty when the guess is bad because instructions need to be undone.The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current.
any passive component and active component such as:Diode, Normally, whether a conditional branch will be taken isn't known until late in the pipeline as conditional branches depend on results coming from a register. The other regions, and their associated terminals, are known as the emitter and the collector. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. A minimal hypothetical microprocessor might only include an arithmetic logic unit (ALU) and a control logic section. For example driver circuit
45DB041B-SI,45DB041B-SI,Comments from user about 45DB041B-SI: 1 (known as VHDL-AMS) provided analog and mixed-signal circuit design extensions. Affordable 8-bit microprocessors with 16-bit addressing also led to the first general-purpose microcomputers from the mid-1970s on. Being created for one element base, a computing device project can be ported on another element base, for example VLSI with various technologies. Band-pass filters ?attenuation of frequencies both above and below those they allow to pass. There are some VHDL compilers which build executable binaries. One barrier to achieving higher performance through instruction-level parallelism stems from pipeline stalls and flushes due to branches. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to precisely control the location and concentration of p- and n-type dopants. The gate electrode is charged to produce an electric field that controls the conductivity of a "channel" between two terminals, called the source and drain. Anything related to :45DB041B-SI, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: 45DB041B-SISee also: