Part: LUWW5SM-KXKY-4C8E

Index Files

Offer Index 24

ATMEL,
IR,
XILINX,
TOS,
CY,
ALTERA,
NXP,
FSC,
VISHAY,
MURATA,
NEC,
ROHM,
POWER,
LINEAR,
SAMSUNG,
FREESCALE,
MOT,
DALLAS,
MICROCHIP,
MIT,
BB,
PHI,
INTEL,
PANASONIC,
ALLEGRO,
IXYS,
WJ,
FUJI,
RENESAS,
INTERSIL,
AMD,
YAGEO,
MPS,
AVAGO,
SIEMENS,
SHARP,
MIC,
BOURNS,
VICOR,
HIT

 
Google Search

Product Summary
Osram LUWW5SM-KXKY-4C8E
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: LUWW5SM-KXKY-4C8E.


Available from: Senda Technology Industrial Co., Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:LM2576HVT-ADJ, LM2576SX-ADJ, LM2612ABPXNS, LM2671M-3.3, LM2675HVM-12, LMD18200, LNK362PN, LP2951CDG, LPC2138FBD, LQG15HS15NJ02D, LQW18ANR10G, LT1764AEQ-3.3, LTC1844ES5-BYP, LTC1851CFW, LTM150XH-L01, LUPXA255A0C200

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: LUWW5SM-KXKY-4C8E":

Post DatePart NumberBrandD/CDescQtyCompany
Tue Jan 3 05:10:00 UTC 2012LUWW5SM-KXKY-4C8E (from hkin.com)Osram10+ROHS18000Senda Technology Industrial Co., Limited
Tue Jan 3 05:10:00 UTC 2012LUWW5SM-KXKY-4C8E (from standard server 2)Osram10+ROHS18000Senda Technology Industrial Co., Limited
Tue Jan 3 05:10:00 UTC 2012LUWW5SM-KXKY-4C8E (from parts server 2)Osram10+ROHS18000Senda Technology Industrial Co., Limited
Tue Jan 3 05:10:00 UTC 2012LUWW5SM-KXKY-4C8E (from hkin.com 2)Osram10+ROHS18000Senda Technology Industrial Co., Limited
Tue Jan 3 05:10:00 UTC 2012LUWW5SM-KXKY-4C8E (from hkin.com 2)Osram10+ROHS18000Senda Technology Industrial Co., Limited

Last record LUPXA255A0C200:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 16 08:17:00 UTC 2012LUPXA255A0C200 (from hkin.com)INTEL0951BGA4500HK Jiaweiyi Technology Limited
Tue Jan 17 01:28:00 UTC 2012LUPXA255A0C200 (from hkin.com)MARVELLĀ 09+BGA25615000Xinye International Technology Limited

Last record LTM150XH-L01:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 9 08:37:00 UTC 2012LTM150XH-L01 (from hkin.com)SAMSUNG10+15'' LCD1000Zhengda Tech (HK) Limited

Last record LTC1851CFW:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 16 08:09:00 UTC 2012LTC1851CFW (from hkin.com)LTC2005+SMD1050Top Electronics Co.,

If you want to find more about LUWW5SM-KXKY-4C8E, please visit us on HKin


vid:offerengine20120117

LUWW5SM-KXKY-4C8E,LUWW5SM-KXKY-4C8E,Comments from user about LUWW5SM-KXKY-4C8E: Floating-point arithmetic, for example, was often not available on 8-bit microprocessors, but had to be carried out in software. In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information. There are two main advantages of ICs over discrete circuits: cost and performance. In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information. A different approach to improving a computer's performance is to add extra processors, as in symmetric multiprocessing designs, which have been popular in servers and workstations since the early 1990s. Circuit designers will sometimes refer to this class of components as dissipative, or thermodynamically passive. It is generally considered a "best practice" to write very idiomatic code for synthesis as results can be incorrect or suboptimal for non-standard constructs. Computers, electronic clocks, and programmable logic controllers (used to control industrial processes) are constructed of digital circuits. Anything related to :LUWW5SM-KXKY-4C8E, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: LUWW5SM-KXKY-4C8E, search hkinventory: LUWW5SM-KXKY-4C8E, Its major limitation for low voltage applications is the high voltage drop it exhibits in on-state (2 to 4 V). The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. The integrated circuit processor was produced in large numbers by highly automated processes, so unit cost was low. Datasheet Dir, DataSheet Archive
Additional features were added to the processor architecture; more on-chip registers speeded up programs, and complex instructions could be used to make more compact programs.hn, which are optimized for distribution of HD content between CE devices in a home. On average, every fifth instruction executed is a branch, so without any intervention, that's a high amount of stalling. The integrated circuit processor was produced in large numbers by highly automated processes, so unit cost was low. These days analog circuitry may use digital or even microprocessor techniques to improve performance. Compared to the MOSFET, the operating frequency of the IGBT is relatively low (few devices are rated over 50 kHz), mainly because of a so-called 'current-tail' problem during turn-off.6 defines a subset of the language that is considered the official synthesis subset. However, its excellent performance in low voltage make it the device of choice (actually the only choice) for applications below 200 V.
any passive component and active component such as:Diode, Circuit breakers are made in varying sizes, from small devices that protect an individual household appliance up to large switchgear designed to protect high voltage circuits feeding an entire city. With this structure, one of the connections of the device is located on the bottom of the semiconductor die. A minimal hypothetical microprocessor might only include an arithmetic logic unit (ALU) and a control logic section. A capacitor (formerly known as condenser) is a device for storing electric charge. For example driver circuit
LUWW5SM-KXKY-4C8E,LUWW5SM-KXKY-4C8E,Comments from user about LUWW5SM-KXKY-4C8E: It has already completely replaced the bipolar transistor in power applications, and the availability of power modules (in which several IGBT dice are connected in parallel) makes it attractive for power levels up to several megawatts, pushing further the limit where thyristors and GTOs become the only option. Although the MOSFET is named in part for its "metal" gate, in modern devices polysilicon is typically used instead. Common emitters are also commonly used as low-noise amplifiers. The size, latency, throughput and connectivity of memories within the system are also microarchitectural decisions. Latches are designed to be transparent. The thyristor appeared in 1957. The trade-off between voltage, current and frequency ratings also exists for the switches.6 defines a subset of the language that is considered the official synthesis subset. Anything related to :LUWW5SM-KXKY-4C8E, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: LUWW5SM-KXKY-4C8ESee also: