Part: ST083S08PFN2P

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Product Summary
Vishay Semiconductors ST083S08PFN2P
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: ST083S08PFN2P.


Available from: Hongkong Dassin Electronics Technology Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:SMF15AT1G-ON, SMJ27C010A-15JM, SMLVT3V3, SN65HVD3082ED, SN74ACT86DR, SN74AHC1G08DBVR, SN74LVCC3245APWR, SP3483, SP503EM, SP6132HEU-L, SP6231ER-3-3-TR, SP8650A, SPA11N65C3, SPB03N60C3, SST39VF3201-70-4C-B3K, SST89V516RD2-33-C-N

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: ST083S08PFN2P":

Post DatePart NumberBrandD/CDescQtyCompany
Thu Jan 12 05:55:00 UTC 2012ST083S08PFN2P (from hkin.com)Vishay Semiconductors10+半导体闸流管 - 两端交流、单端交流、SCR 与三端交流 135 Amp 800 Volt 135 Amp IT(RMS)5000Hongkong Dassin Electronics Technology Limited
Thu Jan 12 05:55:00 UTC 2012ST083S08PFN2P (from standard server 2)Vishay Semiconductors10+半导体闸流管 - 两端交流、单端交流、SCR 与三端交流 135 Amp 800 Volt 135 Amp IT(RMS)5000Hongkong Dassin Electronics Technology Limited
Thu Jan 12 05:55:00 UTC 2012ST083S08PFN2P (from parts server 2)Vishay Semiconductors10+半导体闸流管 - 两端交流、单端交流、SCR 与三端交流 135 Amp 800 Volt 135 Amp IT(RMS)5000Hongkong Dassin Electronics Technology Limited
Thu Jan 12 05:55:00 UTC 2012ST083S08PFN2P (from hkin.com 2)Vishay Semiconductors10+半导体闸流管 - 两端交流、单端交流、SCR 与三端交流 135 Amp 800 Volt 135 Amp IT(RMS)5000Hongkong Dassin Electronics Technology Limited
Thu Jan 12 05:55:00 UTC 2012ST083S08PFN2P (from hkin.com 2)Vishay Semiconductors10+半导体闸流管 - 两端交流、单端交流、SCR 与三端交流 135 Amp 800 Volt 135 Amp IT(RMS)5000Hongkong Dassin Electronics Technology Limited

Last record SST89V516RD2-33-C-N:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 16 08:37:00 UTC 2012SST89V516RD2-33-C-N (from hkin.com)SST10+PLCC6000Hengguang (HK) Electronics Trading Limited
Tue Jan 17 00:39:00 UTC 2012SST89V516RD2-33-C-NJE (from hkin.com)SST1032PLCC5886Wide Key International Limited

Last record SST39VF3201-70-4C-B3K:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 16 08:37:00 UTC 2012SST39VF3201-70-4C-B3K (from hkin.com)SST10+TSOP4000Hengguang (HK) Electronics Trading Limited
Wed Dec 21 03:44:00 UTC 2011SST39VF3201-70-4C-B3KE (from hkin.com)SST9600JetLi Electronic (HK) Limited

Last record SPB03N60C3:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 10:29:00 UTC 2012SPB03N60C3 (from hkin.com)infineon2009+New Original15000Alvio Technology Limited

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ST083S08PFN2P,ST083S08PFN2P,Comments from user about ST083S08PFN2P: LEDs powerful enough for room lighting are relatively expensive and require more precise current and heat management than compact fluorescent lamp sources of comparable output. Basically, an IGBT is a bipolar transistor driven by a power MOSFET: it has the advantages of being a minority carrier device (good performance in on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power). Microprocessors integrated into one or a few large-scale ICs the architectures that had previously been implemented using many medium- and small-scale integrated circuits. The pipeline includes several different stages which are fundamental in microarchitecture designs. Its major limitation for low voltage applications is the high voltage drop it exhibits in on-state (2 to 4 V). When a doped semiconductor contains excess holes it is called "p-type", and when it contains excess free electrons it is known as "n-type", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. Advancing technology makes more complex and powerful chips feasible to manufacture. For quantities that vary polynomially or logarithmically with temperature, it may be possible to calculate a temperature coefficient that is a useful approximation for a certain range of temperatures. Anything related to :ST083S08PFN2P, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: ST083S08PFN2P, search hkinventory: ST083S08PFN2P, Ternary (with three states) logic has been studied, and some prototype computers made.0 and includes enhanced generic types. Digital circuits are electric circuits based on a number of discrete voltage levels. This can be seen in figure 2. Datasheet Dir, DataSheet Archive
Basically, an IGBT is a bipolar transistor driven by a power MOSFET: it has the advantages of being a minority carrier device (good performance in on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power).1 (known as VHDL-AMS) provided analog and mixed-signal circuit design extensions. For example, GPUs through the 1990s were mostly non-programmable and have only recently gained limited facilities like programmable vertex shaders. It has already completely replaced the bipolar transistor in power applications, and the availability of power modules (in which several IGBT dice are connected in parallel) makes it attractive for power levels up to several megawatts, pushing further the limit where thyristors and GTOs become the only option. In 2008, Accellera released VHDL 4. Be aware that some high-pass filter topologies present the input with almost a short circuit to high frequencies. The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. Increasingly stringent pollution control standards effectively require automobile manufacturers to use microprocessor engine management systems, to allow optimal control of emissions over widely-varying operating conditions of an automobile.
any passive component and active component such as:Diode, A passive component, depending on field, may be either a component that consumes (but does not produce) energy (thermodynamic passivity), or a component that is incapable of power gain (incremental passivity). Most of them should not be used in linear operation. This CPU cache has the advantage of faster access than off-chip memory, and increses the processing speed of the system for many applications. Be aware that some high-pass filter topologies present the input with almost a short circuit to high frequencies. For example driver circuit
ST083S08PFN2P,ST083S08PFN2P,Comments from user about ST083S08PFN2P: Unlike what happened when IA-32 was extended to x86-64, no new general purpose registers were added in 64-bit PowerPC, so any performance gained when using the 64-bit mode for applications making no use of the larger address space is minimal.Different temperature coefficients are specified for various applications, including nuclear, electrical and magnetic. An example is the comparator which takes in a continuous range of voltage but only outputs one of two levels as in a digital circuit. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the gA range). In case of large forward bias (current in the direction of the arrow), the diode exhibits a voltage drop due to its junction built-in voltage and internal resistance. This type of circuit is usually called "mixed signal" rather than analog or digital. Passivity is a property of engineering systems, used in a variety of engineering disciplines, but most commonly found in analog electronics and control systems. This equation is linear with respect to temperature. Anything related to :ST083S08PFN2P, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: ST083S08PFN2PSee also: