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ROHM BH33FB1WG-TR
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: BH33FB1WG-TR.

Available from: Hongkong Viltz Electronics Co, Limited
Condition: in excellent condition
In stock! Order now!

Post Date

Part Number

Brand

D/C

Desc

Qty

Company

Tue May 28 01:02:00 UTC 2013

BH33FB1WG-TR (from standard server 2)

ROHM

09+

SOT

5630

Hongkong Viltz Electronics Co, Limited

Tue May 28 01:02:00 UTC 2013

BH33FB1WG-TR (from parts server 2)

ROHM

09+

SOT

5630

Hongkong Viltz Electronics Co, Limited

Tue May 28 01:02:00 UTC 2013

BH33FB1WG-TR (from hkin.com 2)

ROHM

09+

SOT

5630

Hongkong Viltz Electronics Co, Limited

Tue May 28 01:02:00 UTC 2013

BH33FB1WG-TR (from hkin.com 2)

ROHM

09+

SOT

5630

Hongkong Viltz Electronics Co, Limited

vid:offerengine20130528 Part Number Prefix

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BH33FB1WG-TR,BH33FB1WG-TR,Comments from user about BH33FB1WG-TR: In response, microprocessor manufacturers look for other ways to improve performance in order to hold on to the momentum of constant upgrades in the market. In the mid-1980s to early-1990s, a crop of new high-performance Reduced Instruction Set Computer (RISC) microprocessors appeared, influenced by discrete RISC-like CPU designs such as the IBM 801 and others. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. Cost is low because the chips, with all their components, are printed as a unit by photolithography rather than being constructed one transistor at a time. The trade-off between voltage, current and frequency ratings also exists for the switches. With the ability to put large numbers of transistors on one chip, it becomes feaible to integrate memory on the same die as the processor. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. Its major limitation for low voltage applications is the high voltage drop it exhibits in on-state (2 to 4 V). Anything related to :BH33FB1WG-TR, or electronic components and electronic component distributors such as:fairchild,avx capacitor, or electronics part index in: BH33FB1WG-TRSee also:

Part: BH33FB1WG-TR

vid:offerengine20130528 Part Number Prefix