Part: EKME500ELLR10ME11D

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Product Summary
Chemi-con EKME500ELLR10ME11D
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: EKME500ELLR10ME11D.


Available from: Cheng Xin (International) Technology Co., Ltd
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:DP83907VF, DP8571AN, DR125-560-R, DR127-1R5-R, DS12, DS1557-100, DS1818R-5, DS32KHZ, DTC114, DVC5402GGU100, E18075, E211ATF, ECE5021-NU, EEFUD0D221XR, EGXE630ELL221MK20S, EKME201ELL330MK25S

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: EKME500ELLR10ME11D":

Post DatePart NumberBrandD/CDescQtyCompany
Mon Nov 14 09:26:00 UTC 2011EKME500ELLR10ME11D (from hkin.com)Chemi-con2010+Original packaging213000Cheng Xin (International) Technology Co., Ltd
Mon Nov 14 09:26:00 UTC 2011EKME500ELLR10ME11D (from standard server 2)Chemi-con2010+Original packaging213000Cheng Xin (International) Technology Co., Ltd
Mon Nov 14 09:26:00 UTC 2011EKME500ELLR10ME11D (from parts server 2)Chemi-con2010+Original packaging213000Cheng Xin (International) Technology Co., Ltd
Mon Nov 14 09:26:00 UTC 2011EKME500ELLR10ME11D (from hkin.com 2)Chemi-con2010+Original packaging213000Cheng Xin (International) Technology Co., Ltd
Mon Nov 14 09:26:00 UTC 2011EKME500ELLR10ME11D (from hkin.com 2)Chemi-con2010+Original packaging213000Cheng Xin (International) Technology Co., Ltd

Last record EKME201ELL330MK25S:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Nov 23 08:34:00 UTC 2011EKME201ELL330MK25S (from hkin.com)NIPPON CHEMI-CON2010+160000Guanxin Electronics (HK) Co., Limited

Last record EGXE630ELL221MK20S:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Dec 14 08:51:00 UTC 2011EGXE630ELL221MK20S (from hkin.com)NCC 10+63v220uf 5000Ayeung Technology Co.,Limited
Mon Nov 14 09:26:00 UTC 2011EGXE630ELL221MK20S (from hkin.com)Chemi-con2010+Original packaging176000Cheng Xin (International) Technology Co., Ltd

Last record EEFUD0D221XR:

Post DatePart NumberBrandD/CDescQtyCompany
Thu Dec 1 12:01:00 UTC 2011EEFUD0D221XR (from hkin.com)05+ROHSPASNASONIC2000Bright Spot Technology Development Co., Ltd.

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EKME500ELLR10ME11D,EKME500ELLR10ME11D,Comments from user about EKME500ELLR10ME11D: Several specialized processing devices have followed from the technology. This equation is linear with respect to temperature. This technique is used in most modern microprocessors, microcontrollers, and DSPs. For example, most constructs that explicitly deal with timing such as wait for 10 ns; are not synthesizable despite being valid for simulation. Synthesis is a process where a VHDL is compiled and mapped into an implementation technology such as an FPGA or an ASIC. The move to 64 bits is more than just an increase in register size from the IA-32 as it also doubles the number of general-purpose registers. Bipolar junction transistors are formed from two p-n junctions, in either n-p-n or p-n-p configuration. Circuit breakers for large currents or high voltages are usually arranged with pilot devices to sense a fault current and to operate the trip opening mechanism. Anything related to :EKME500ELLR10ME11D, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: EKME500ELLR10ME11D, search hkinventory: EKME500ELLR10ME11D,Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. This problem is caused by the slow decay of the conduction current during turn-off resulting from slow recombination of large number of carriers, which flood the thick 'drift' region of the IGBT during conduction. When a light-emitting diode is forward biased (switched on), electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. Datasheet Dir, DataSheet Archive
It has already completely replaced the bipolar transistor in power applications, and the availability of power modules (in which several IGBT dice are connected in parallel) makes it attractive for power levels up to several megawatts, pushing further the limit where thyristors and GTOs become the only option. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. A logic gate consists of up to about twenty transistors whereas an advanced microprocessor, as of 2011, can use as many as 3 billion transistors (MOSFETs). An electronic circuit consisting entirely of passive components is called a passive circuit (and has the same properties as a passive component). The advent of low-cost computers on integrated circuits has transformed modern society. Capacitors are widely used in electronic circuits for blocking direct current while allowing alternating current to pass, in filter networks, for smoothing the output of power supplies, in the resonant circuits that tune radios to particular frequencies and for many other purposes. A circuit breaker is an automatically operated electrical switch designed to protect an electrical circuit from damage caused by overload or short circuit. Under this methodology, voltage and current sources are considered active, while resistors, transistors, tunnel diodes, glow tubes, capacitors, metamaterials and other dissipative and energy-neutral components are considered passive.
any passive component and active component such as:Diode, For example, most constructs that explicitly deal with timing such as wait for 10 ns; are not synthesizable despite being valid for simulation. A different approach to improving a computer's performance is to add extra processors, as in symmetric multiprocessing designs, which have been popular in servers and workstations since the early 1990s. When there is a potential difference (voltage) across the conductors, a static electric field develops across the dielectric, causing positive charge to collect on one plate and negative charge on the other plate. Digital circuits are electric circuits based on a number of discrete voltage levels. For example driver circuit
EKME500ELLR10ME11D,EKME500ELLR10ME11D,Comments from user about EKME500ELLR10ME11D: There is an ever increasing need to keep product information updated and comparable, for the consumer to make an informed choice. A capacitor (formerly known as condenser) is a device for storing electric charge. The ISA is roughly the same as the programming model of a processor as seen by an assembly language programmer or compiler writer. A single operation code might affect many individual data paths, registers, and other elements of the processor. Basically, an IGBT is a bipolar transistor driven by a power MOSFET: it has the advantages of being a minority carrier device (good performance in on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power). In the case of narrow-band bandpass filters, the Q determines the -3dB bandwidth but also the degree of rejection of frequencies far removed from the center frequency; if these two requirements are in conflict then a staggered-tuning bandpass filter may be needed. An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity. A capacitor is a passive electronic component consisting of a pair of conductors separated by a dielectric (insulator). Anything related to :EKME500ELLR10ME11D, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: EKME500ELLR10ME11DSee also: