Part: GRM21BR61C335K

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Product Summary
Murata GRM21BR61C335K
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: GRM21BR61C335K.


Available from: Fargoing Technology (Hongkong) Electron Co., Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:IRF6217PBF, ELXV100ELL102MJ20S, AD7810YRZ-REEL7, AD7874ARZ-REEL7, AD817ARZ-REEL, AD8534ARUZ-REEL, TLV2762IDGKG4, ISP1583BSUM, STC809S, 50YXF22MEFCT15X11, 6ES7332-5HD01-OABO, 6SE7090-0XX84, LRA32H2FBBNN, 17S40PC, 2SB1182-TL-Q, GRM188R71H104K

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: GRM21BR61C335K":

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from hkin.com)Murata11+500000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from standard server 2)Murata11+500000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from parts server 2)Murata11+500000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from hkin.com 2)Murata11+500000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from hkin.com 2)Murata11+500000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from hkin.com) MURATA 11+3000/R1000000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from standard server 2) MURATA 11+3000/R1000000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from parts server 2) MURATA 11+3000/R1000000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from hkin.com 2) MURATA 11+3000/R1000000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM21BR61C335K (from hkin.com 2) MURATA 11+3000/R1000000Fargoing Technology (Hongkong) Electron Co., Limited

Last record GRM188R71H104K:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 02:20:00 UTC 2012GRM188R71H104K(Chip Capacitors) (from hkin.com)MURATA 11+1000000Fargoing Technology (Hongkong) Electron Co., Limited
Mon Dec 26 08:39:00 UTC 2011GRM188R71H104KA93D (from hkin.com)MURATA10+ROHSchip capacitor80000Gretec Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM188R71H104KA93D (from hkin.com)Murata11+500000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM188R71H104KA93D (from hkin.com) MURATA 11+4000/R1000000Fargoing Technology (Hongkong) Electron Co., Limited
Fri Jan 13 02:20:00 UTC 2012GRM188R71H104K (from hkin.com)Murata 11+1000000Fargoing Technology (Hongkong) Electron Co., Limited

Last record 2SB1182-TL-Q:

Post DatePart NumberBrandD/CDescQtyCompany
Mon Jan 2 05:23:00 UTC 20122SB1182-TL-Q (from hkin.com)5000SR Weike (Hongkong) Limited

Last record 17S40PC:

Post DatePart NumberBrandD/CDescQtyCompany
Wed Jan 4 07:13:00 UTC 201217S40PC (from hkin.com)XILINX02+DIP-816Yakesheng Elect Trade Co

If you want to find more about GRM21BR61C335K, please visit us on HKin


vid:offerengine20120117

GRM21BR61C335K,GRM21BR61C335K,Comments from user about GRM21BR61C335K: Latches are designed to be transparent. With AMD's introduction of a 64-bit architecture backwards-compatible with x86, x86-64 (also called AMD64), in September 2003, followed by Intel's near fully compatible 64-bit extensions (first called IA-32e or EM64T, later renamed Intel 64), the 64-bit desktop era began. Another type of transistor, the field effect transistor operates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field. When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown. An example is the comparator which takes in a continuous range of voltage but only outputs one of two levels as in a digital circuit. An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. Alternatively, additional logic can be added to a simple transparent latch to make it non-transparent or opaque when another input (an "enable" input) is not asserted. Anything related to :GRM21BR61C335K, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: GRM21BR61C335K, search hkinventory: GRM21BR61C335K, An LED is often small in area (less than 1 mm2), and integrated optical components may be used to shape its radiation pattern. In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier. The ALU performs operations such as addition, subtraction, and operations such as AND or OR. Passive filters are uncommon in monolithic integrated circuit design, where active devices are inexpensive compared to resistors and capacitors, and inductors are prohibitively expensive. Datasheet Dir, DataSheet Archive
However, remember that the internal output impedance of operational amplifiers, if used, may rise markedly at high frequencies and reduce the attenuation from that expected. VHDL has file input and output capabilities, and can be used as a general-purpose language for text processing, but files are more commonly used by a simulation testbench for stimulus or verification data. For each computer built, all of these had to be placed and soldered onto printed circuit boards, and often multiple boards would have to be interconnected in a chassis. As it is a physical limit, no improvement is expected from silicon MOSFETs concerning their maximum voltage ratings. The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. However, remember that the internal output impedance of operational amplifiers, if used, may rise markedly at high frequencies and reduce the attenuation from that expected. This technique is used in most modern microprocessors, microcontrollers, and DSPs. Microprocessors operate on numbers and symbols represented in the binary numeral system.
any passive component and active component such as:Diode, These units perform the operations or calculations of the processor. Both versions can run 32-bit legacy applications without any performance penalty as well as new 64-bit software. Semiconductor components benefit from Moore's Law, an observed principle which states that, for a given price, semiconductor functionality doubles every two years. Cost is low because the chips, with all their components, are printed as a unit by photolithography rather than being constructed one transistor at a time. For example driver circuit
GRM21BR61C335K,GRM21BR61C335K,Comments from user about GRM21BR61C335K: Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication.0 and includes enhanced generic types. Desirable properties of MOSFETs, such as their utility in low-power devices, usually in the CMOS configuration, allowed them to capture nearly all market share for digital circuits; more recently MOSFETs have captured most analog and power applications as well, including modern clocked analog circuits, voltage regulators, amplifiers, power transmitters, motor drivers, etc. Thyristors are able to withstand very high reverse breakdown voltage and are also capable of carrying high current. Being created for one element base, a computing device project can be ported on another element base, for example VLSI with various technologies. The updated IEEE 1076, in 1993, made the syntax more consistent, allowed more flexibility in naming, extended the character type to allow ISO-8859-1 printable characters, added the xnor operator, etc. The field may be applied by a reverse-biased p-n junction, forming a junction field effect transistor, or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a metal-oxide-semiconductor field effect transistor, or MOSFET. The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. Anything related to :GRM21BR61C335K, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: GRM21BR61C335KSee also: