Part: MMBT5401LT1G--

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Product Summary
ON MMBT5401LT1G--
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: MMBT5401LT1G--.


Available from: Shenzhen Xinhengchang Electronics Co.,Ltd.
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:MDD19-16IO8B, ME6913D, MEV1S2412SC, MIC29150, MIC5213-3.0BC5, MIC5219BM5, MIC5310-PGYML, MIC5330-2.8/1.8YML, MIC833BM5, MIG150J202HA, MINISMDC260F-2, MJC-005-B, MJD32C, MK48Z12B-12, MK48Z52B-15, MM5451YV

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: MMBT5401LT1G--":

Post DatePart NumberBrandD/CDescQtyCompany
Sun Jan 15 04:04:00 UTC 2012MMBT5401LT1G-- (from hkin.com)ON2010++SOT-2363000Shenzhen Xinhengchang Electronics Co.,Ltd.
Sun Jan 15 04:04:00 UTC 2012MMBT5401LT1G-- (from standard server 2)ON2010++SOT-2363000Shenzhen Xinhengchang Electronics Co.,Ltd.
Sun Jan 15 04:04:00 UTC 2012MMBT5401LT1G-- (from parts server 2)ON2010++SOT-2363000Shenzhen Xinhengchang Electronics Co.,Ltd.
Sun Jan 15 04:04:00 UTC 2012MMBT5401LT1G-- (from hkin.com 2)ON2010++SOT-2363000Shenzhen Xinhengchang Electronics Co.,Ltd.
Sun Jan 15 04:04:00 UTC 2012MMBT5401LT1G-- (from hkin.com 2)ON2010++SOT-2363000Shenzhen Xinhengchang Electronics Co.,Ltd.

Last record MM5451YV:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 08:54:00 UTC 2012MM5451YV (from hkin.com)PLCC443000Kingrole Industry (Hongkong) Limited
Thu Jan 12 05:14:00 UTC 2012MM5451YV (from hkin.com)MICRELPLCC443000Netchip Limited
Thu Dec 29 02:14:00 UTC 2011MM5451YV (from hkin.com)11+PLCCMICREL12553H.K. Dak Hengda Technology Limited
Mon Jan 9 05:35:00 UTC 2012MM5451YV (from hkin.com)PLCC44MICREL3000HK Meihang Technology Co., Limited

Last record MK48Z52B-15:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 08:14:00 UTC 2012MK48Z52B-15 (from hkin.com)ST2008+DIP2000Wintrus Tech (HK) Co.,Limited

Last record MK48Z12B-12:

Post DatePart NumberBrandD/CDescQtyCompany
Fri Jan 13 08:14:00 UTC 2012MK48Z12B-12 (from hkin.com)ST2008+DIP2000Wintrus Tech (HK) Co.,Limited

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MMBT5401LT1G--,MMBT5401LT1G--,Comments from user about MMBT5401LT1G--: Capacitors used as parts of electrical systems, for example, consist of metal foils separated by a layer of insulating film. Basically, an IGBT is a bipolar transistor driven by a power MOSFET: it has the advantages of being a minority carrier device (good performance in on-state, even for high voltage devices), with the high input impedance of a MOSFET (it can be driven on or off with a very low amount of power). The compact size, the possibility of narrow bandwidth, switching speed, and extreme reliability of LEDs has allowed new text and video displays and sensors to be developed, while their high switching rates are also useful in advanced communications technology. Desirable properties of MOSFETs, such as their utility in low-power devices, usually in the CMOS configuration, allowed them to capture nearly all market share for digital circuits; more recently MOSFETs have captured most analog and power applications as well, including modern clocked analog circuits, voltage regulators, amplifiers, power transmitters, motor drivers, etc. System-level design decisions such as whether or not to include peripherals, such as memory controllers, can be considered part of the microarchitectural design process. In 1986, HP released its first system with a PA-RISC CPU. In 2008, Accellera released VHDL 4. Generally, in datasheets, turn-off energy is mentioned as a measured parameter and one has to multiply that number with the switching frequency of the intended application to estimate the turn-off loss. Anything related to :MMBT5401LT1G--, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: MMBT5401LT1G--, search hkinventory: MMBT5401LT1G--, Some other standards support wider use of VHDL, notably VITAL (VHDL Initiative Towards ASIC Libraries) and microwave circuit design extensions. The MOSFET is particularly suited to this configuration because its positive thermal coefficient of resistance tends to balance current between individual devices. They are commonly used in speaker crossover design (due to the moderately large voltages and currents, and the lack of easy access to power), filters in power distribution networks (due to the large voltages and currents), power supply bypassing (due to low cost, and in some cases, power requirements), as well as a variety of discrete and home brew circuits (for low-cost and simplicity). From the time that the processor's instruction decoder has figured out that it has encountered a conditional branch instruction to the time that the deciding register value can be read out, the pipeline needs to be stalled for several cycles, or if it's not and the branch is taken, the pipeline needs to be flushed. Datasheet Dir, DataSheet Archive
The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current. The integrated circuit processor was produced in large numbers by highly automated processes, so unit cost was low. His chip solved many practical problems that Kilby's had not. With this structure, one of the connections of the device is located on the bottom of the semiconductor die. Passivity, in most cases, can be used to demonstrate that passive circuits will be stable under specific criteria. Indeed, it may be the desire to incorporate a passive filter that leads the designer to use the hybrid format. The junctions which form where n-type and p-type semiconductors join together are called p-n junctions. The integration of large numbers of tiny transistors into a small chip was an enormous improvement over the manual assembly of circuits using electronic components.
any passive component and active component such as:Diode, While 64-bit microprocessor designs have been in use in several markets since the early 1990s, the early 2000s saw the introduction of 64-bit microprocessors targeted at the PC market. The large contact area and short distance reduces both the inductance and resistance of the connection. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to precisely control the location and concentration of p- and n-type dopants. Although the MOSFET is named in part for its "metal" gate, in modern devices polysilicon is typically used instead. For example driver circuit
MMBT5401LT1G--,MMBT5401LT1G--,Comments from user about MMBT5401LT1G--: Each logic gate is in turn represented by a circuit diagram describing the connections of the transistors used to implement it in some particular logic family. Power semiconductor devices first appeared in 1952 with the introduction of the power diode by R. This collection of simulation models is commonly called a testbench. Integrated circuits were made possible by experimental discoveries showing that semiconductor devices could perform the functions of vacuum tubes and by mid-20th-century technology advancements in semiconductor device fabrication. It is often easier and cheaper to use a standard microcontroller and write a computer program to carry out a control function than to design an equivalent mechanical control function. Circuit breakers for large currents or high voltages are usually arranged with pilot devices to sense a fault current and to operate the trip opening mechanism. Depending on the type of carrier in the channel, the device may be an n-channel (for electrons) or a p-channel (for holes) MOSFET. A passive component, depending on field, may be either a component that consumes (but does not produce) energy (thermodynamic passivity), or a component that is incapable of power gain (incremental passivity). Anything related to :MMBT5401LT1G--, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: MMBT5401LT1G--See also: