Part: S29GL128N10TFI02

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Product Summary
SPANSION S29GL128N10TFI02
This is an offer provided by HKin.com member.
In stock! Order now!
Category: Electronic Components.
Product #: S29GL128N10TFI02.


Available from: HK Meihang Technology Co., Limited
Condition: in excellent condition
In stock! Order now!

Part Numbers

Previous Parts:2249, MC74HC393ANG, MBR130T1G, AD6492BB, BU4S81, BAV99/8, MPF39VF020-70-4I-NH, MSM7731-02, MT48LC32M16A2, TC74HC157AF, LA4601, M27C801-120F1, AH22S-G, AH312-S8G, HCS301/P, TC4511BP

(+HKin.com) :) The followings are offers provided by our member in Electronic Components Offer site about the following parts: S29GL128N10TFI02":

Post DatePart NumberBrandD/CDescQtyCompany
Tue Jan 10 07:08:00 UTC 2012S29GL128N10TFI02 (from hkin.com)SPANSIONSOP200HK Meihang Technology Co., Limited
Tue Jan 10 07:08:00 UTC 2012S29GL128N10TFI02 (from standard server 2)SPANSIONSOP200HK Meihang Technology Co., Limited
Tue Jan 10 07:08:00 UTC 2012S29GL128N10TFI02 (from parts server 2)SPANSIONSOP200HK Meihang Technology Co., Limited
Tue Jan 10 07:08:00 UTC 2012S29GL128N10TFI02 (from hkin.com 2)SPANSIONSOP200HK Meihang Technology Co., Limited
Tue Jan 10 07:08:00 UTC 2012S29GL128N10TFI02 (from hkin.com 2)SPANSIONSOP200HK Meihang Technology Co., Limited

Last record TC4511BP:

Post DatePart NumberBrandD/CDescQtyCompany
Tue Jan 3 03:39:00 UTC 2012TC4511BP (from hkin.com)TOS97+DIP45Faishing Electronic Technology (HK) Limited
Tue Jan 3 04:11:00 UTC 2012TC4511BP (from hkin.com)TOS97+DIP45Caymat Electronics Limited

Last record HCS301/P:

Post DatePart NumberBrandD/CDescQtyCompany
Tue Jan 17 04:55:00 UTC 2012HCS301/P (from hkin.com)MICROCHI06+DIP35KingMay Electronic (HK) Co., Limited

Last record AH312-S8G:

Post DatePart NumberBrandD/CDescQtyCompany
Sat Jan 14 01:38:00 UTC 2012AH312-S8G (from hkin.com)WJ11+SOP82000Zhengxinyuan Electronics (HK) Co., Limited

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S29GL128N10TFI02,S29GL128N10TFI02,Comments from user about S29GL128N10TFI02: For example, GPUs through the 1990s were mostly non-programmable and have only recently gained limited facilities like programmable vertex shaders. Depending on the type of carrier in the channel, the device may be an n-channel (for electrons) or a p-channel (for holes) MOSFET. Power semiconductor devices first appeared in 1952 with the introduction of the power diode by R. In response, microprocessor manufacturers look for other ways to improve performance in order to hold on to the momentum of constant upgrades in the market. Some components, such as bus interface and second level cache, may be shared between cores. RISC microprocessors were initially used in special-purpose machines and Unix workstations, but then gained wide acceptance in other roles. The MOSFET is particularly suited to this configuration because its positive thermal coefficient of resistance tends to balance current between individual devices. The range of desired frequencies (the passband) together with the shape of the frequency response. Anything related to :S29GL128N10TFI02, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: S29GL128N10TFI02, search hkinventory: S29GL128N10TFI02, IEEE standard 1076. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. For quantities that vary polynomially or logarithmically with temperature, it may be possible to calculate a temperature coefficient that is a useful approximation for a certain range of temperatures. Produced at Fairchild Semiconductor, it was made of silicon, whereas Kilby's chip was made of germanium. Datasheet Dir, DataSheet Archive
Desirable properties of MOSFETs, such as their utility in low-power devices, usually in the CMOS configuration, allowed them to capture nearly all market share for digital circuits; more recently MOSFETs have captured most analog and power applications as well, including modern clocked analog circuits, voltage regulators, amplifiers, power transmitters, motor drivers, etc. This can be seen in figure 2. They are also called power devices or when used in integrated circuits, called power ICs. It has already completely replaced the bipolar transistor in power applications, and the availability of power modules (in which several IGBT dice are connected in parallel) makes it attractive for power levels up to several megawatts, pushing further the limit where thyristors and GTOs become the only option. As microprocessor designs get faster, the cost of manufacturing a chip (with smaller components built on a semiconductor chip the same size) generally stays the same. Passive filters are uncommon in monolithic integrated circuit design, where active devices are inexpensive compared to resistors and capacitors, and inductors are prohibitively expensive. An integrated circuit or monolithic integrated circuit (also referred to as IC, chip, and microchip) is an electronic circuit manufactured by the patterned diffusion of trace elements into the surface of a thin substrate of semiconductor material. Capacitors used as parts of electrical systems, for example, consist of metal foils separated by a layer of insulating film.
any passive component and active component such as:Diode, Key changes include incorporation of child standards (1164, 1076.2, 1076.3) into the main 1076 standard, an extended set of operators, more flexible syntax of case and generate statements, incorporation of VHPI (interface to C/C++ languages) and a subset of PSL (Property Specification Language). When a light-emitting diode is forward biased (switched on), electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. One barrier to achieving higher performance through instruction-level parallelism stems from pipeline stalls and flushes due to branches. While 64-bit microprocessor designs have been in use in several markets since the early 1990s, the early 2000s saw the introduction of 64-bit microprocessors targeted at the PC market. For example driver circuit
S29GL128N10TFI02,S29GL128N10TFI02,Comments from user about S29GL128N10TFI02: This creates a much larger current between the collector and emitter, controlled by the base-emitter current. Graphics processing units may have no, limited, or general programming facilities.[3] Each microarchitectural element is in turn represented by a schematic describing the interconnections of logic gates used to implement it. The net result is that the turn-off switching loss of an IGBT is considerably higher than its turn-on loss. The bipolar junction transistor, or BJT, was the most commonly used transistor in the 1960s and 70s. Current conduction in a semiconductor occurs via mobile or "free" electrons and holes, collectively known as charge carriers. Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a numberfrom a few (as low as two) to billionsof devices manufactured and interconnected on a single semiconductor substrate. Competing projects would result in the IBM POWER and Sun SPARC architectures. Anything related to :S29GL128N10TFI02, or electronic components and electronic component distributors such as:fairchild,avx capacitor,6502, or electronics part index in: S29GL128N10TFI02See also: