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Description

May 9, 2014 STR2550 . High voltage fast-switching PNP power transistor. Datasheet - production data. Figure 1. Internal schematic diagram. Features. Excellent hFE linearity up to 50 mA. Miniature SOT-23 plastic package for surface. Sep 12, 2014 STR2550 . 49.9k. R3. 0.05. R2. 0.1uF. C2. 0.1uF. C1. J1 Vin. 571-0500. J2 GND. 571-0100. J3 Vout. 571-0500. J4 GND. 571-0100. TP3 Out. GND_1. GND. TP2 390V. 200k. R1. TP1 400V. PIC101. PIC102. COC1. PIC201. Diode and STR2550 Transistor were used to create a simple floating power supply and biasing the INA138 directly from the high voltage source. The 400V in this design is an example. With different components even higher common mode DEM Manufacturing. 571-0100. 6. 1. Q2. 500V. Transistor, PNP, 500V, 0.5A, SOT -. 23. ST. STR2550 . PBHV9050T,215. SOT-23. 7. 1. R1. 200k. RES, 200kohm, 1 %, 1W, 2010. Vishay-Dale. CRCW20101R00JNEFHP. CRM2010-FX-2003ELF. May 28, 2015 BSS138. Fairchild Semiconductor. MOSFET, N-CH, 50V, 0.22A, SOT-23. SOT-23. Q5. 1. STR2550 . STR2550 . ST. Transistor, PNP, 500 V, 0.5 A, SOT-23. SOT-23. Q6. 1. BSS83P. BSS83P. Diodes Inc. MOSFET, P-CH, -60 V,

Part Number STR2550
Main Category Discrete Semiconductor Products
Sub Category Transistors - Bipolar (BJT) - Single
Brand
Description TRANS PNP 500V 0.5A SOT-23
Series -
Packaging Tape & Reel (TR)
Transistor Type PNP
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 500V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 50mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V
Power - Max 500mW
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Image Discrete Semiconductor Products - Transistors
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STR2550

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