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Description
Mar 3, 2014 STF13N60M2 , STFI13N60M2. N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg. Power MOSFETs in TO-220FP and I. 2. PAKFP packages. Datasheet production data. Figure 1. Internal schematic diagram. Jan 12, 2015 STF13N60M2 (045Y). N-channel 600 V, 0.35 typ., 11 A MDmesh M2. Power MOSFET in a TO-220FP narrow leads package. Datasheet production data. Figure 1. Internal schematic diagram. Features. Extremely low gate STF13N60M2 . TK10A60W. SiHF12N60E. MMF60R360PTH. NCE60R360F. SSF11NS60F. LSD11N60F. TK15A60D. MDF15N60GTH. FDPF17N60NT. IPD60R3K4CE. LSG02N60. IPD60R2K1CE. NCE60R2K2K. SSF5N60D. STD4NK60Z. Feb 27, 2015 Copper Alloy. Package Designator. Size. Nbr of instances. Shape. SIP. 10.2X9. 2X4.5. 3. Through-hole. Comment. Package: TO 220 ISO FULL PACK IN LINE; MDF valid for STF13N60M2 . Manufacturing information. Product Mar 30, 2015 based on L6599 and STF13N60M2 . A 200 W reference board was used to test and compare the electrical performance of the. ST MDmesh M2 and MDmesh M5 MOSFET technologies against the best competitor.
| Part Number | STF13N60M2 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 600V 11A TO-220FP |
| Series | MDmesh,II Plus |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 100V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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