Rated 
(5/5) based on 17 customer reviews
(5/5) based on 17 customer reviews
Description
Oct 14, 2011 Figure 1. Internal schematic diagram. Type. VDSS @. TJmax. RDS(on) max. ID. STB16N65M5. 710 V. < 0.279 . 12 A. STD16N65M5 . DPAK.
| Part Number | STD16N65M5 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 650V 12A DPAK |
| Series | MDmesh,V |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 100V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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Antony Electronic Ltd.
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5000
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Company:
INSO (INCREDIBLE SOLUTION) HK LIMITED
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