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Description
DATASHEET Rev. 2.7. Page 1. 2011-09-27. SPP17N80C3 . SPA17N80C3. Cool MOS Power Transistor. VDS. 800. V. RDS(on). 0.29. . ID. 17. A. Feature. Sep 27, 2011 SPP17N80C3 . CoolMOS. . Power Transistor. Features. New revolutionary high voltage technology. Extreme dv/dt rated. High peak SPP17N80C3 . Issued. 16. September 2016. MA#. MA001114474. Package. PG- TO220-3-123. Weight*. 2033.20 mg. Construction Element. Material Group. Apr 8, 2013 SPP17N80C3 . Q1. SPP17N80C3 . R12. 3.09k. R12. 3.09k. C21. 4.7pF. C21. 4.7 pF. C7. 0.1uF. C7. 0.1uF. D9. CMR1U-02M. D9. CMR1U-02M. Sep 21, 2012 SPP17N80C3 . Q1. SPP17N80C3 . HS1. R13. OPT. R13. OPT. D8. SBR10U300CT. D8. SBR10U300CT. C2. 0.47uF. 450V. C2. 0.47uF. 450V.
| Part Number | SPP17N80C3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 800V 17A TO-220AB |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 177nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
| Image |  |
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