(5/5) based on 2 customer reviews
Description
MOSFET 2P-CH 30V 60A PPAK SO-8 Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 60A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250米A Gate Charge (Qg) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) @ Vds: 6200pF @ 15V Power - Max: 46W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
| Part Number | SI7997DP-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | |
| Description | MOSFET 2P-CH 30V 60A PPAK SO-8 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 15V |
| Power - Max | 46W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK SO-8 Dual |
| Supplier Device Package | PowerPAK SO-8 Dual |
| Image |  |
Hot Offer
SI7997DP-T1-GE3
vishay
5000
1.86
Rolics Technology Limited
SI7997DP-T1-GE3
VISHAY
10000
2.49
CHIP TOO (HK) TECHNOLOGY LIMITED
SI7997DP-T1-GE3
VISHAY
32000
3.12
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7997DP-T1-GE3
TI
1200
3.75
HK FEILIDI ELECTRONIC CO., LIMITED
SI7997DP-T1-GE3
MICROCHIP
780
4.38
HK JDW ELECTRONIC CO., LIMITED
