(5/5) based on 11 customer reviews
Description
MOSFET 2N-CH 60V 6.5A 8-SOIC Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 6.5A Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) @ Vds: 840pF @ 30V Power - Max: 3.7W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI4946BEY-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | |
| Description | MOSFET 2N-CH 60V 6.5A 8-SOIC |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
| Power - Max | 3.7W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
SI4946BEY-T1-GE3
VISHAY/
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0.7
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HEXING TECHNOLOGY (HK) LIMITED
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FOREST INTERCONTINENTAL COMPANY LIMITED
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SUNTOP SEMICONDUCTOR CO., LIMITED
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RX ELECTRONICS LIMITED
