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Rated (5/5) based on 19 customer reviews

Description

MOSFET N-CH 20V 3.9A SOT23-3 Series: TrenchFET? Amplifier Type: -55°C ~ 150°C (TJ) Capacitance: Surface Mount Connector Type: TO-236-3, SC-59, SOT-23-3 Function: SOT-23-3 (TO-236) Logic Type: Number of Channels: Proto Board Type: Resistance (Ohms): Voltage - Off State: Circuit: Direction: Inputs - Side 1/Side 2: Number of Circuits:

Part Number SI2312BDS-T1-GE3
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand
Description MOSFET N-CH 20V 3.9A SOT23-3
Series TrenchFET
Packaging
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Rds On (Max) @ Id, Vgs 31 mOhm @ 5A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.73   Highest Price: $3.99
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Hot Offer

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Part Number:

SI2312BDS-T1-GE3

Brand:

VISHAY

D/C:
2021
Qty:

30000

Price (USD):

0.73

Company:

Hong Kong In Fortune Electronics Co., Limited

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Part Number:

SI2312BDS-T1-GE3

Brand:

Vishay

D/C:
Qty:

14682

Price (USD):

1.545

Company:

Huaixin Development (HK) Co., Limited

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Part Number
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Part Number:

SI2312BDS-T1-GE3

Brand:

VISHAY

D/C:
Qty:

2399

Price (USD):

2.36

Company:

Prime Semiconductors LLP

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Part Number:

SI2312BDS-T1-GE3

Brand:

VISHAY

D/C:
Qty:

11717

Price (USD):

3.175

Company:

ShinCo Cyteth Limited

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Part Number:

SI2312BDS-T1-GE3

Brand:

VISHAY

D/C:
2023
Qty:

30000

Price (USD):

3.99

Company:

Hong Kong In Fortune Electronics Co., Limited

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SI2312BDST1GE3 Ref.

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