Description
MOSFET N/P-CH 20V SC89-6 Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: - Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) @ Vds: 43pF @ 10V Power - Max: 220mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6
Part Number | SI1016CX-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | |
Description | MOSFET N/P-CH 20V SC89-6 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 396 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
Power - Max | 220mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SC-89-6 |
Image |
SI1016CX-T1-GE3
VISHAY
180
0.4
SUNTOP SEMICONDUCTOR CO., LIMITED
SI1016CX-T1-GE3
VISHAY
40053
2.09
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI1016CX-T1-GE3
VISHAY
3334
3.78
NOSIN (HK) ELECTRONICS CO., LIMITED
SI1016CX-T1-GE3
6000
5.47
Deve Electronics (HK) Co., Limited
SI1016CX-T1-GE3
VISHAY/
68586
7.16
CIS Ltd (CHECK IC SOLUTION LIMITED)