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Description

ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete STMicroelectronics 1200V SiC MOSFET STC30N120 1200V SiC MOSFET vs Silicon IGBT: Technology and cost

Part Number SCT2H12NZGC11
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand
Description MOSFET N-CH 1700V 3.7A
Series -
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PFM
Package / Case TO-3PFM, SC-93-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.7   Highest Price: $7.16
1 - 5 of 5 Record(s)
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

SCT2H12NZGC11

Brand:

Rohm Semiconductor

D/C:
Qty:

130

Price (USD):

1.7

Company:

RX ELECTRONICS LIMITED

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Part Number:

SCT2H12NZGC11

Brand:

N/A

D/C:
Qty:

5000

Price (USD):

3.065

Company:

JFJ Electronics Co.,Limited

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Part Number:

SCT2H12NZGC11

Brand:

ROHM

D/C:
2023
Qty:

5150

Price (USD):

4.43

Company:

Hong Kong In Fortune Electronics Co., Limited

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Part Number:

SCT2H12NZGC11

Brand:

ROHM

D/C:
22+
Qty:

80000

Price (USD):

5.795

Company:

TREECLY TECHNOLOGY LIMITED

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Part Number:

SCT2H12NZGC11

Brand:

Rohm

D/C:
23+
Qty:

1470

Price (USD):

7.16

Company:

HK GUANGLIANDA ELECTRONIC LIMITED

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SCT2H12NZGC11 Ref.

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