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Rated (4/5) based on 12 customer reviews
Part Number SCT20N120
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand
Description MOSFET N-CH 1200V 20A HIP247
Series -
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 400V
Vgs (Max) +25V, -10V
FET Feature -
Power Dissipation (Max) 175W (Tc)
Rds On (Max) @ Id, Vgs 290 mOhm @ 10A, 20V
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247
Package / Case TO-247-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.45   Highest Price: $5.29
1 - 5 of 5 Record(s)
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

SCT20N120

Brand:

ST

D/C:
22+
Qty:

86

Price (USD):

1.45

Company:

Guofanghui (Hong Kong) Technology Co., Limited

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Part Number:

SCT20N120

Brand:

ST

D/C:
Qty:

14416

Price (USD):

2.41

Company:

N&S Electronic Co., Limited

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Part Number:

SCT20N120

Brand:

ST

D/C:
24+
Qty:

10000

Price (USD):

3.37

Company:

HongKong Chi Yuet Electronics Co.,Limited

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Part Number:

SCT20N120

Brand:

ST

D/C:
21+
Qty:

3400

Price (USD):

4.33

Company:

Corechips Co., Limited

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Part Number:

SCT20N120

Brand:

STMicroelectronics

D/C:
21+
Qty:

30000

Price (USD):

5.29

Company:

USEMI LIMITED

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SCT20N120 Ref.

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