Description
MOSFET 2N-CH 20V 0.8A SOT666 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 800mA Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250米A Gate Charge (Qg) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) @ Vds: 83pF @ 10V Power - Max: 500mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666
Part Number | PMDT290UNE,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | |
Description | MOSFET 2N-CH 20V 0.8A SOT666 |
Series | Automotive, AEC-Q101, TrenchMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
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