(4/5) based on 12 customer reviews
Description
MOSFET 2N-CH 60V 6A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
| Part Number | NVMFD5877NLT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | |
| Description | MOSFET 2N-CH 60V 6A 8SOIC |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Power - Max | 3.2W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
| Image |  |
Hot Offer
NVMFD5877NLT1G
ON
3678
0.41
FOREST INTERCONTINENTAL COMPANY LIMITED
NVMFD5877NLT1G
ON(安森美)
2820
0.7975
ALLCHIPS ELECTRONICS LIMITED
NVMFD5877NLT1G
ON Semiconductor
804
1.185
RX ELECTRONICS LIMITED
NVMFD5877NLT1G
22+
1500
1.5725
Shenzhen HYC Electronic&Technology Co.,Ltd
NVMFD5877NLT1G
ON
1500
1.96
HK JDW ELECTRONIC CO., LIMITED
