Description
CHARACTERISTICS TC = 25 C. SYMBOL. NONETEST CONDITIONS. MINIMUM TYPICAL MAXIMUM UNITS. BVCBO. IC = 1.0 mA. 30. V. BVCEO. IC = 5.0 mA. BFR96. NPN 500. 2. 10 10. 14.5 500. 2.6. 15 100. SO-8. MRF5812, R1, R2 NPN 500. 2. 50 10 15.5 17.8 5000. 15 200. MACRO X. MRF581A . NPN 500. 2. 50 10.
Part Number | MRF581A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | |
Description | TRANS NPN 15V 200MA MACRO X |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
Gain | 13dB ~ 15.5dB |
Power - Max | 1.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 200mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Micro-X ceramic (84C) |
Supplier Device Package | Micro-X ceramic (84C) |
Image |
Hot Offer
MRF581A
Microsemi
13100
0.05
Shenzhen HYWY Elec Co., Ltd
MRF581A
MICROSEMI/
28485
0.8325
Ande Electronics Co., Limited
MRF581A
MOTOROLA
6254
1.615
E-Core Electronics Co.
MRF581A
Microsemi()
2140
2.3975
ALLCHIPS ELECTRONICS LIMITED
MRF581A
Microsemi
15816
3.18
Georlin Technology Ltd