Description
DATASHEET XX = MA for MBT3904DW1T1G . MJ for MBT3904DW2T1G. M = Date Code. G = Pb Free Package. (Note: Microdot may be in either location). Q1. (1). (2). (3). (4). Jun 15, 2007 MBT3904DW1T1G . MBT3904DW1T3. MBT3904DW1T3G. MBT3906DW1T1. MBT3906DW1T1G. MBT3946DW1T1. MBT3946DW1T1G. Continuo us (A). V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. MBT3904DW1T1G . AEC. Qualified. Pb-free. Halide free. Apr 12, 2006 Page 6 of 11. Product Discontinuance #15503. Device to be discontinued. Suggested alternative. Supplier. MMPQ3904R1. MBT3904DW1T1G . Taiyo Yuden. Q1, Q2. Dual Transistors Package. MBT3904DW1T1G . Dual Transistors Package. MBT3904DW1T1G . ON Semi. R1. 2.2 k , 1/4 W Chip Resistor.
Part Number | MBT3904DW1T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | |
Description | TRANS 2NPN 40V 0.2A SC88 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
Power - Max | 150mW |
Frequency - Transition | 300MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
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