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Description
Datasheet IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA56N15T. IXTP56N15T . Symbol. Test Conditions. Characteristic Values. 134 IXTP56N15T . K636. 120. 125. 1000. 30. 0. 30000. 135 IXTP62N25T. K648. 200. 125. 1000. 30. 0. 30000. 136 IXTP74N15T. K636. 120. 125. 1000. 30. 0. 208 IXTP56N15T . K636. 120. 125. 1000. 30. 0. 30000. 209 IXTP62N25T. K648. 200. 125. 1000. 30. 0. 30000. 210 IXTP74N15T. K636. 120. 125. 1000. 30. 0.
| Part Number | IXTP56N15T |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 150V 56A TO-220 |
| Series | TrenchHV |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 28A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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