Description
Datasheet 2005 IXYS All rights reserved. Symbol. Test Conditions. Maximum Ratings. VDSS . TJ. = 25 C to 150 C. 300. V. VDGR. TJ. = 25 C to 150 C; RGS = 1 M . 300. V. 1000h, 200h at 125 C. 74 IXKR25N80C. 1521. 640. 125. 168. 20. 0. 3360. 75 IXTA36N30P . SK0509. 240. 125. 1000. 30. 0. 30000. 76 IXTA36N30P . K0526. 240. 30000. 141 IXTA36N30P . K0621. 240. 125. 1000. 30. 0. 30000. 142 IXTA36N30P . K640. 240. 125. 1000. 30. 0. 30000. 143 IXTA50N25T. K545. 200. 125. 1000. 284 IXTA36N30P . SS0905. 240. 125. 1000. 30. 0. 30000. 285 IXTA3N120. TS1115. 960. 125. 1000. 30. 0. 30000. 286 IXTA62N15P. SS1047. 120. 125. 1000.
Part Number | IXTA36N30P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET N-CH 300V 36A TO-263 |
Series | PolarHT |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXTA) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IXTA36N30P**
IXYS/
38860
1.71
Ande Electronics Co., Limited
IXTA36N30P
1141
2.9075
HK S.Z.C ELECTRONICS LIMITED
IXTA36N30P
IXYS
3654
4.105
Xinye International Technology Limited
IXTA36N30P
IXYS
68
5.3025
RX ELECTRONICS LIMITED
IXTA36N30P
IXYS()
2530
6.5
ALLCHIPS ELECTRONICS LIMITED