(4/5) based on 5 customer reviews
Description
Aug 12, 2000 l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2905) l Straight Lead ( IRLU2905 ) l Advanced Process Technology. Specifically designed for Automotive applications, this HEXFET . Power MOSFET utilizes the latest processing techniques to achieve extremely low Jul 12, 2004 l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2905) l Straight Lead ( IRLU2905 ) l Advanced Process Technology. Number. Revision. Size. A4. Date: 12/9/2010. Sheet of. File: C:\Users\..\ StepUpConverter.SchDoc. Drawn By: Q1. IRF9Z34NPBF. 1uF. C2. 10K. R1. 100R. R2. Power MOSFETs (Metal Oxide Semiconductor Field Effect. Transistor) are the most commonly used power devices due to their low gate drive power, fast
| Part Number | IRLU2905 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 55V 42A I-PAK |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Image |  |
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