Description
Jan 13, 2003 Parameter. Max. Units. VDS. Drain- Source Voltage. -20. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ -4.5V. -5.6. ID @ TA= 70 C. <1.0. <1.0. <1.0. 11100. IRF6603 (DirectFET). <1.0. <1.0. <1.0. 19.2. IRLML6401TRPBF (Micro-3). <1.0. <1.0. <1.0. 6.4. IRLMS6802TRPBF (Micro-6). <1.0. <1.0.
Part Number | IRLMS6802TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET P-CH 20V 5.6A 6-TSOP |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1079pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro6,TSOP-6) |
Package / Case | SOT-23-6 |
Image |
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