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IRLB3034 . 1 uF. 100V. C7. 1. 2. 3. 4. J12. JTAG. VCCIO. Unused. TX1. RX1. 1. 2. 3. J13. Header 3. VCCIO. PD4. 1. 2. 3. J14. Header 3. PC5. PC4. C11 1000 pf. Feb 7, 2009 Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V (Silicon Limited). ID @ TC Mar 1, 2001 Advanced HEXFET Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of todays VLSI circuits, although the device geometry, voltage Dec 2, 2004 INTRODUCTION. This is the second in a series of application notes that define the fundamental behavior of MOSFETs, both as standalone.