Description
Datasheet Oct 23, 2000 IRFR/U5305. HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to IRFR/U5410. HEXFET Power MOSFET. VDSS = -100V. RDS(on) = 0.205W. ID = -13A. 5/3/99. Parameter. Typ. Max. Units. RqJC. Junction-to-Case. . 1.9.
Part Number | IRFR5305PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | |
Description | MOSFET P-CH 55V 31A DPAK |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
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