(5/5) based on 16 customer reviews
Description
MOSFET 2N-CH 20V 10A/12A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 10A, 12A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250米A Gate Charge (Qg) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) @ Vds: 900pF @ 10V Power - Max: 2W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | IRF9910TRPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | |
| Description | MOSFET 2N-CH 20V 10A/12A 8-SOIC |
| Series | HEXFET |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Rds On (Max) @ Id, Vgs | 9.3 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
Hot Offer
IRF9910TRPBF
INFINEON
1000
1.71
ONSTAR ELECTRONICS CO., LIMITED
IRF9910TRPBF
Infineon
138
2.5175
N&S Electronic Co., Limited
IRF9910TRPBF
INFINEON
1185
3.325
Shenzhen Mairuida Technology Co.Ltd.
IRF9910TRPBF
IR
61425
4.1325
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRF9910TRPBF
Infineon
6709
4.94
HONGKONG SINIKO ELECTRONIC LIMITED
