(5/5) based on 15 customer reviews
Description
Oct 16, 2014 Pulsed Drain Current . PD. ID. IRF7807V. 8.3. 2.5. 66. 2.5. -55 to 150. 1.6. 66. 30. 20. 6.6. HEXFET Power MOSFET. IRF7807VTRPbF -1. ERJ-8RQFR22V. Digi-Key. P.22RCT-ND. 29. 1 Q1. International Rectifier. IRF7807VTRPBF . Digi-Key. IRF7807VPBFCT-ND. 30. 1 Q2. Fairchild Semiconductor. May 10, 2007 IRF7807VTRPBF . 3. R1, R10, R11 RES 1.00K OHM 1/8W 1% 0805 SMD Panasonic - ECG. ERJ-6ENF1001V. 3. R2, R18, R19 RES 10.0K Jan 16, 2009 DS51791A-page 22. 2009 Microchip Technology Inc. 1. Q1. HEX/MOS N- CHAN 30V 8.3A. 8SOIC. International Rectifier. IRF7807VTRPBF . 1. 2011 11 29 IRF7807VTRPBF . 3. R1, R10, R11 RES 1.00K OHM 1/8W 1% 0805 SMD Panasonic - ECG. ERJ-6ENF1001V. 3. R2, R18, R19 RES 10.0K
| Part Number | IRF7807VTRPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | |
| Description | MOSFET N-CH 30V 8.3A 8-SOIC |
| Series | HEXFET |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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